EPC9036: 12 V – 1.2 V Development Board 90% System Efficiency @ 25 A, 500 kHz
Commercially available enhancement mode monolithic half-bridge GaN transistors further widen the efficiency gap between eGaN® technology and traditional silicon. Monolithic half-bridge devices save space, improve efficiency, and lower system costs.
- Increase Efficiency
Monolithic half-bridge devices eliminate interconnect inductances for higher efficiency – especially at higher frequencies.
- Save Board Space
Monolithic devices save 60% of power stage real estate on the PCB.
- Simplifying GaN
Monolithic devices increase manufacturing efficiencies while reducing assembly costs.
Asymmetrical Half-Bridge Devices for High Step-Down Applications
Symmetrical Half-Bridge Devices for 50% Duty Cycle or Low Step-Down Applications
GaN Integration for Higher DC-DC Efficiency and Power Density