Integrated GaN Power:
Increase Efficiency and Power Density

Integrated GaN Power: Increase Efficiency and Power Density
EPC9036: 12 V – 1.2 V Development Board 90% System Efficiency @ 25 A, 500 kHz

Commercially available enhancement mode monolithic half-bridge GaN transistors further widen the efficiency gap between eGaN® technology and traditional silicon. Monolithic half-bridge devices save space, improve efficiency, and lower system costs.

  • Increase Efficiency
    Monolithic half-bridge devices eliminate interconnect inductances for higher efficiency – especially at higher frequencies.
  • Save Board Space
    Monolithic devices save 60% of power stage real estate on the PCB.
  • Simplifying GaN
    Monolithic devices increase manufacturing efficiencies while reducing assembly costs.

Monolithic GaN Schematic

Datasheet Summary

Asymmetrical Half-Bridge Devices for High Step-Down Applications

Part Number Voltage Max RDS(on) (mΩ) (VGS = 5 V) Max. Peak Pulsed ID (A)
(25°C, Tpulse = 300 µs)		 Development Boards
    Q1 Control
FET		 Q2 Sync
FET		 Q1 Control
FET 		Q2 Sync
FET		  
EPC2111 30 19 8 50 140 N/A
EPC2100 30 8.2 2.1 100 400 EPC9036
EPC2101 60 11.5 2.8 80 350 EPC9037
EPC2105 80 14.5 3.6 70 300 EPC9041

Symmetrical Half-Bridge Devices for 50% Duty Cycle or Low Step-Down Applications

Part Number Voltage Max RDS(on) (mΩ) (VGS = 5 V) Max. Peak Pulsed ID (A)
(25°C, Tpulse = 300 µs)		 Development Boards
EPC2102 60 4.9 220 EPC9038
EPC2103 80 5.5 195 EPC9039
EPC2104 100 6.8 180 EPC9040

Application Note

GaN Integration for Higher DC-DC Efficiency and Power Density

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