EPC1007 - Enhancement Mode Power Transistor

VDS, 100 V
RDS(on), 30 mΩ
ID, 6 A

EPC1007 Enhancement Mode GaN Power Transistor
Die Size: 1.7 mm x 1.1 mm

Applications

  • High Speed DC-DC Conversion
  • Hard Switched and High Frequency Circuits
  • Class D Audio

Benefits

  • Ultra High Efficiency
  • Ultra Low RDS(on)
  • Ultra Low QG
  • Ultra small footprint
Status: Obsolete
Use EPC2015 for new designs
Ask and EPC Engineer a Question FAQ

Have a question about EPC eGaN FETs and ICs?
Ask a GaN Expert