EPC2014 - Enhancement Mode Power Transistor

VDS, 40 V
RDS(on), 16 mΩ
ID, 10 A
RoHS 6/6, Halogen Free

EPC2014 Enhancement Mode GaN Power Transistor
Die Size: 1.7 mm x 1.1 mm


  • High Speed DC-DC Conversion
  • High Frequency Hard Switching and Soft Switching
  • Pulsed Current Applications


  • Higher Switching Frequency – lower switching losses and lower drive power
  • Higher Efficiency – lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Obsolete
Use EPC2014C for new designs
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