EPC2306: 100 V, 197 A Enhancement-Mode GaN Power Transistor

VDS, 100 V
Max RDS(on), 3.1 mΩ
ID, 62 A
Pulsed ID, 197 A

EPC2306 Enhancement Mode GaN Power Transistor
Package Size: 3 mm x 5 mm

Applications

  • AC/DC Chargers
  • High-frequency DC-DC converters up to 80 V input (Buck, Boost, Buck-Boost, and LLC)
  • 24 V – 60 V motor drives
  • High power density DC-DC modules from 40 – 60 VIN to 5 – 12 VOUT
  • Synchronous rectification
  • Solar MPPT

Benefits

  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Ultra-small Footprint - Higher power density
Status: Preferred

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