EPC2306: 100 V, 197 A Enhancement-Mode GaN Power Transistor

VDS, 100 V
RDS(on), 3.8 mΩ
ID, 48 A
Pulsed ID, 197 A

EPC2306 Enhancement Mode GaN Power Transistor
Package Size: 3 mm x 5 mm


  • AC/DC Chargers
  • High-frequency DC-DC converters up to 80 V input (Buck, Boost, Buck-Boost, and LLC)
  • 24 V – 60 V motor drives
  • High power density DC-DC modules from 40 – 60 VIN to 5 – 12 VOUT
  • Synchronous rectification
  • Solar MPPT


  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Ultra-small Footprint - Higher power density
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.
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