EPC2307: 200 V, 130 A Enhancement-Mode GaN Power Transistor

VDS, 200 V
RDS(on), 10 mΩ
ID, 48 A
Pulsed ID, 130 A

EPC2307 Enhancement Mode GaN Power Transistor
Package Size: 3 mm x 5 mm


  • Synchronous rectification
  • AC/DC chargers, SMPS, adaptors
  • High frequency DC-DC conversion
  • Class-D audio
  • Wireless Power
  • High power lidar & dToF


  • Higher efficiency
    • Lower conduction losses
    • Lower switching losses
    • Zero reverse recovery losses
  • Higher power density
  • Ultra-small footprint
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.
Ask and EPC Engineer a Question FAQ

Have a question about EPC eGaN FETs and ICs?
Ask a GaN Expert