EPC2307: 200 V, 130 A Enhancement-Mode GaN Power Transistor

V_DS, 200 V
R_DS(on), 10 mΩ
I_D, 63 A
Pulsed I_D, 130 A

Package Size: 3 mm x 5 mm

Higher efficiency
- Lower conduction losses
- Lower switching losses
- Zero reverse recovery losses
Higher power density
Ultra-small footprint

Status: Preferred

Start your design today with these low cost evaluation options:

EPC90150	200 V, 20 A half-bridge evaluation	Buy Now
EPC9192	2 x 700 W/4 Ω half-bridge evaluation	Buy Now

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