EPC2308: 150 V, 6 mΩ Enhancement-Mode GaN Power Transistor

VDS, 150 V
RDS(on), 6 mΩ
ID, 48 A
Pulsed ID, 157 A

EPC2308 Enhancement Mode GaN Power Transistor
Package Size: 3 mm x 5 mm


  • Sync rectification applications to 28 V-36 V-48 V-54 V
    • Chargers
    • Adaptors
    • Power Supplies/SMPS 100 W – 500 W
      • Fast charging for phones & notebooks
      • Gaming PCs
      • eBikes
      • eScooters
      • Power Tools
      • Vacuums
  • Solar optimizers


  • High efficiency
    • Lower conduction and switching losses
  • No reverse recovery (QRR)
  • Ultra-small footprint
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.
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