EPC2367: 100 V, 101 A Enhancement-Mode GaN Power Transistor

VDS, 100 V
Typical RDS(on), 1.2 mΩ
ID, 101 A
Pulsed ID, 420 A

EPC2367 GaN PowerIC
Package Size: 3.3 x 3.3 mm

Applications

  • High frequency DC-DC conversion
  • High power-density DC-DC modules
  • Motor drives
  • Synchronous rectification

Benefits

  • Ultra-high efficiency
  • No reverse recovery (Qrr)
  • Ultra-low QG
  • Small footprint
  • Excellent thermal performance
Status: Preferred

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