EPC9079 - Development Board

EPC9079 – 200 V, 6 A Development Board

EPC9079 Development Board

The EPC9079 development board is a 200 V maximum device voltage, 6 A maximum output current, half bridge with onboard gate drives, featuring the EPC2046 enhancement mode (eGaN®) field effect transistor (FET).

To simplify the evaluation process of the EPC2046 GaN FET, all the critical components are included on a single board that can be easily connected into any existing converter.

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EPC9079 Parameters Table
(1) Maximum input voltage depends on inductive loading, maximum switch node ringing must be kept under 200 V for EPC2046
(2) Maximum current depends on die temperature – actual maximum current with be subject to switching frequency, bus voltage and thermal cooling.
(3) Limited by time needed to ‘refresh’ high side bootstrap supply voltage.