EPC2203 - Enhancement Mode Power Transistor

VDS, 80 V
RDS(on), 80 mΩ
ID, 1.7 A
Pulsed ID, 17 A
AEC-Q101 Qualified

EPC2203 Enhancement Mode GaN Power Transistor
Die Size: 0.9 mm x 0.9 mm

Applications

  • LiDAR/Pulsed Power Applications
  • High Power Density DC-DC Converters
  • High-Fidelity Infotainment
  • High-Intensity Headlamps

Benefits

  • Higher Switching Frequency – Lower switching losses and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Production
Ask and EPC Engineer a Question FAQ

Have a question about EPC eGaN FETs and ICs?
Ask a GaN Expert