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48 V DC-DC Solutions with
Greater than 98%
Efficiency for Ultra-Thin,
High-Density Computing
Learn More/Buy Now
Harnessing the Power
of GaN for Motor Drives
Presented by:
Alex Lidow, CEO and Co-Founder of EPC
Guest Panelist:
David Lunsetter, Applications Engineer
at Digi-Key Electronics
More Information/Register
48 V = GaN
More Efficient
Smaller
Lower Cost
More Information
New
100 V eGaN
®
Devices
Increase Performance Gap
Over the Aging
Silicon Power MOSFET
Learn More/Buy Now
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New 100 V eGaN Devices Increase Benchmark Performance Over the Aging Silicon Power MOSFET
New 200 V eGaN Devices Double the Performance Edge Over the Aging Silicon Power MOSFET.
Why GaN in Space?
Latest News
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eGaN FETs from EPC Enable Multiple 250 W, 48 V DC-DC Solutions with 98% ...
The Ascent of GaN: Redefining Power Conversion with GaN-on-Si Integrated ...
eGaN
®
FETs and ICs are transforming markets. Watch these videos to learn how.