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Understanding Why GaN
is More Robust than
Silicon Power MOSFETs
Presented by: Shengke Zhang Ph.D.,
Manager of Failure Analysis at EPC
More Information/Register
GaN Power for
Solar Power
High Efficiency
Smaller
Most Reliable
More Information
200 V eGaN
®
FETs...
Double the performance
edge vs. silicon
Learn More/Buy now
Microchip and EPC Develop
300 W
1
/
16
th
Brick
Power Density = 730 W/in
3
Efficiency = 96%
More Information/Buy Now
GaN...Driving Changes
in Automotive Systems
Smaller
More Efficient
Lower Cost
More Information
eGaN FETs and ICs
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What is Gallium Nitride?
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New 100 V eGaN Devices Increase Benchmark Performance Over the Aging Silicon Power MOSFET
New 200 V eGaN Devices Double the Performance Edge Over the Aging Silicon Power MOSFET.
Why GaN in Space?
Latest News
Testing Gallium Nitride Devices to Failure Under Extreme Voltage and Current ...
GaN HEMTs Outperform MOSFETs in Key Growth Applications
EPC Doubles the Performance of its 200 V eGaN FET Family
The Smarter the Car, the More it Needs GaN
eGaN
®
FETs and ICs are transforming markets. Watch these videos to learn how.