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Latest from the GaN Talk Blog

How to Design a Highly Efficient, 2.5 kW, Universal Input Voltage Range, Power Factor Correction (PFC) 400 V Rectifier Using 200 V eGaN<sup>®</sup> FETs

How to Design a Highly Efficient, 2.5 kW, Universal Input Voltage Range, Power Factor Correction (PFC) 400 V Rectifier Using 200 V eGaN^® FETs

New 100 V eGaN Devices Increase Benchmark Performance Over the Aging Silicon Power MOSFET

New 100 V eGaN Devices Increase Benchmark Performance Over the Aging Silicon Power MOSFET

New 200 V eGaN Devices Double the Performance Edge Over the Aging Silicon Power MOSFET.

New 200 V eGaN Devices Double the Performance Edge Over the Aging Silicon Power MOSFET.

Latest News

GaN and SiC are the next frontline in power conversion

GaN and SiC are the next frontline in power conversion

Efficient Power Conversion Wins ASPENCORE’s World Electronics Achievement ...

Efficient Power Conversion Wins ASPENCORE’s World Electronics Achievement ...

EPC Launches 170 V eGaN FET Offering Best-in-Class Synchronous Rectification ...

EPC Launches 170 V eGaN FET Offering Best-in-Class Synchronous Rectification ...

Efficient Power Conversion (EPC) Strengthens European Sales Team

Efficient Power Conversion (EPC) Strengthens European Sales Team

eGaN^® FETs and ICs are transforming markets. Watch these videos to learn how.