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New
100 V eGaN
®
Devices
Increase Performance Gap
Over the Aging
Silicon Power MOSFET
Learn More/Buy Now
GaN Power for
Solar Power
High Efficiency
Smaller
Most Reliable
More Information
200 V eGaN
®
FETs...
Double the performance
edge vs. silicon
Learn More/Buy now
Microchip and EPC Develop
300 W
1
/
16
th
Brick
Power Density = 730 W/in
3
Efficiency = 96%
More Information/Buy Now
GaN...Driving Changes
in Automotive Systems
Smaller
More Efficient
Lower Cost
More Information
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New 100 V eGaN Devices Increase Benchmark Performance Over the Aging Silicon Power MOSFET
New 200 V eGaN Devices Double the Performance Edge Over the Aging Silicon Power MOSFET.
Why GaN in Space?
Latest News
EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V ...
Testing Gallium Nitride Devices to Failure Under Extreme Voltage and Current ...
GaN HEMTs Outperform MOSFETs in Key Growth Applications
EPC Doubles the Performance of its 200 V eGaN FET Family
eGaN
®
FETs and ICs are transforming markets. Watch these videos to learn how.