Gallium nitride (GaN) is transforming power electronics from low-voltage motor drives to megawatt-class AI data centers. In this interview, EPC details how seventh- and upcoming eighth-generation GaN devices outperform silicon by up to 5x in capacitance, area, and power density, unlocking 40V-and-below markets and advanced point-of-load conversion for GPUs. The discussion spans high-performance robotics on 48 V buses, multi-level ISOP topologies for 800 V systems, rapid prototyping via reference designs, and the growing role of GaN in space applications.

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Maurizio Di Paolo Emilio, Director of Global Marketing Communications at EPC