News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.

EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

Categories: Press Releases
EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum RDS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level converters, EV charging, solar power inverters, lidar, and LED lighting.

EL SEGUNDO, Calif.— April 2022 — EPC announces the production release of the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 80 mΩ and a 26 A pulsed output current. The EPC2050 measures just 1.95 mm x 1.95 mm. This tiny size enables power solutions that occupy ten times less area than comparable silicon solutions.

Applications benefiting from the fast-switching speed and tiny size of the EPC2050 include DC-DC conversion from/to 120 V-160 V such as in aerospace applications, 120 V-150 V motor control for medical motors, DC-AC inverters, multi-level converters such as Totem Pole PFC and DC-DC solutions converting 400 V input to 12 V, 20 V or 48 V outputs. Additional applications include fast chargers, battery management systems, electric vehicle charging, solar power inverters, high power lidar for autonomous cars and delivery vehicles, LED lighting, RF switches, and consumer & industrial wirings like wall-mounted sockets and Class D Audio.

The EPC2050 is also suitable for 120 VAC-only applications. A typical power supply bus voltage is between 170 V and 250 V. This includes applications specific to the Americas market, such as power tools and in-wall powered devices, seat-back airline 120 V inverters, and commercial LED lighting.

“With the EPC2050, designers no longer have to choose between size and performance – they can have both and lower cost!” said Alex Lidow, EPC’s CEO.

Development Board

The EPC90121 development board is a 350 V maximum device voltage, 4 a maximum output current half bridge featuring the EPC2050, and the On-Semi NCP51820 gate driver. The board measures 2” x 2” and contains all critical components, and the layout supports optimal switching performance.

Price and Availability

The EPC2050 eGaN FET is priced for 1K units at $3.05 each, and the EPC90121 development board is priced at $156.25 each. Both are available from Digi-Key at https://www.digikey.com/en/supplier-centers/epc   

About EPC

EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low-cost satellites

Follow EPC on Social Media: LinkedIn, YouTube, Facebook, Twitter, Instagram, YouKu

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press contact: Efficient Power Conversion:  Renee Yawger tel: +1.908.619.9678 email: [email protected]