GaN Talk a blog dedicated to crushing silicon
Term: DC-DC Conversion
6 post(s) found

Building the Smallest, Most Cost Effective, Highest Efficiency Non-isolated 48 V to 5 - 12 V DC to DC Converters using latest Generation 100 V eGaN FETs

Building the Smallest, Most Cost Effective, Highest Efficiency Non-isolated 48 V to 5 - 12 V DC to DC Converters using latest Generation 100 V eGaN FETs
Apr 24 2019

The latest generation of 100 V GaN devices increase the efficiency, shrink the size, and reduce system cost for 48 V power conversion. The EPC2045, shown in figure 1, is rated at 100 V with 7 mΩ on- resistance that can carry a continuous current of 16 A. The EPC2045 is nearly one-tenth the footprint of a comparable Si MOSFET and has lower parasitic capacitances and can switch much faster than equivalent silicon devices, yielding lower switching loss even at higher switching frequency.

The EPC2053, shown in figure 2, is rated at 100 V with 4 mΩ on-resistance that can carry a continuous current of 32 A. The EPC2053 has lower parasitic capacitances and on-resistance than its silicon counterparts, yielding faster switching speed and lower power losses even at higher switching frequencies. These characteristics enable increasing the output power while shrinking the volume of the converter.

Exceeding 98% Efficiency in a Compact 48 V to 12 V, 900 W LLC Resonant Converter Using eGaN FETs

Exceeding 98% Efficiency in a Compact 48 V to 12 V, 900 W LLC Resonant Converter Using eGaN FETs
Apr 03 2019

Motivation

The rapid expansion of the computing and telecommunication market is demanding an ever more compact, efficient and high power density solution for intermediate bus converters. The LLC resonant converter is a remarkable candidate to provide a high power density and high-efficiency solution. eGaN® FETs with their ultra-low on-resistance and parasitic capacitances, benefit LLC resonant converters by significant loss reduction that is challenging when using Si MOSFETs. A 48 V to 12 V, 900 W, 1 MHz LLC DC to DC transformer (DCX) converter employing eGaN FETs such as EPC2053 and EPC2024 is demonstrated, yielding a peak efficiency of 98.4% and a power density exceeding 1500 W/in3.

How to Exceed 98% Efficiency in a Compact 48 V to 6 V, 900 W LLC Resonant Converter Using eGaN FETs

How to Exceed 98% Efficiency in a Compact 48 V to 6 V, 900 W LLC Resonant Converter Using eGaN FETs
Mar 12 2019

The rapid expansion of the computing and telecommunication market is demanding an ever more compact, efficient and high power density solution for intermediate bus converters. The LLC resonant converter is a remarkable candidate to provide a high power density and high efficiency solution. eGaN® FETs with their ultra-low on-resistance and parasitic capacitances, benefit LLC resonant converters by significant loss reduction that is challenging when using Si MOSFETs. A 48 V to 6 V, 900 W, 1 MHz LLC DC to DC transformer (DCX) converter employing eGaN FETs such as EPC2053 and EPC2023 is demonstrated, yielding a peak efficiency of 98.1% with a specific power of 48 W/cm2 (308 W/in2) and power density of 69 W/cm3 (1133 W/in3).

More Data, More Apps, More Mobile…

More Data, More Apps, More Mobile…
Oct 18 2017

I don’t know about you, but in my house the number of mobile devices seems to multiply overnight, along with the ways they are used.  On any given night, you may find me on a GoToMeeting conference on my laptop, my husband on a video Skype chat from his phone with his dad in Florida, my oldest son turning in an assignment on Google Classroom from his laptop, my younger son streaming videos on his tablet, and my second grader recording and posting a music.ly on her phablet.  And when we travel, these devices come with us so they need to be small and lightweight enough to come along for ride! 

This all translates into ever-increasing power demands for computing and telecom systems and the conflicting desire for small, lightweight form factors, and extended battery life. To meet these demands, point-of-load (POL) DC-DC converters (the power engines) need to be designed to be small sized and as efficient as possible. These demands translate to ever faster switching frequencies of the transistors used in the power conversion running these devices. Notebook PCs, tablets, and phablets are especially sensitive to this need as our dependency on these devices and the demands we make on them continues to grow. 

Rethinking Server Power Architecture in a Post-Silicon World: Getting from 48 Vin – 1 Vout Directly

Rethinking Server Power Architecture in a Post-Silicon World: Getting from 48 Vin – 1 Vout  Directly
Jul 26 2016

The demand by our society for information is growing at an unprecedented rate. With emerging technologies, such as cloud computing and the internet of things (IoT), this trend for more and faster access to information is showing no signs of slowing. What makes the transfer of information at high rates of speed possible are racks and racks of servers, mostly located in centralized data centers.

GaN technology is getting exciting…end applications are emerging!

GaN technology is getting exciting…end applications are emerging!
Jun 07 2016

As the VP of Sales and Marketing for EPC, I have attended a number of power electronics industry trade shows since the beginning of the year. What has struck me about these shows is the increasing number of end product demonstrations enabled by GaN FET and IC technology.

At CES in January, APEC in March, PCIM Europe in May, and most recently, at Computex Asia last month, GaN applications were front and center. Here are a few examples of what I saw: