EPC2204: 100 V, 125 A Enhancement-Mode GaN Power Transistor

VDS, 100 V
RDS(on), 6 mΩ
ID, 29 A
Pulsed ID, 125 A

EPC2204 Enhancement Mode GaN Power Transistor
Die Size: 2.5 mm x 1.5 mm

Applications

  • DC-DC Converters
  • BLDC Motor Drives
  • Sync Rectification for AC/DC and DC-DC
  • Lidar/Pulsed Power
  • Point-of-Load Converters
  • USB-C
  • Class-D Audio
  • LED Lighting
  • E-Mobility

Benefits

  • Higher Switching Frequency – Lower switching losses and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Production
Ask and EPC Engineer a Question FAQ

Have a question about EPC eGaN FETs and ICs?
Ask a GaN Expert