EPC2206 - Automotive 80 V, 390 A Enhancement-Mode GaN Power Transistor

VDS, 80 V
Max RDS(on), 2.2 mΩ
ID, 90 A
Pulsed ID, 390 A
AEC-Q101 Qualified

EPC2206 Enhancement Mode GaN Power Transistor
Die Size: 6.05 mm x 2.3 mm


  • 48 V Power Distribution Systems
  • Open Rack Server Architectures
  • High-Fidelity Infotainment
  • High-Intensity Headlamps
  • Isolated Power Supplies
  • Low Inductance Motor Drive


  • Higher Switching Frequency – Lower switching losses and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Semiconductor Product of the Year
Status: Production
Ask and EPC Engineer a Question FAQ

Have a question about EPC eGaN FETs and ICs?
Ask a GaN Expert