EPC2375: 100 V, 101 A, 0.9 mΩ GaN Power Transistor

VDS, 100 V
Typ RDS(on), 0.9 mΩ
ID, 101 A

EPC2375 Enhancement Mode GaN Power Transistor
Package Size: 3 mm x 5 mm

Applications

  • High power PSU AC-DC synchronous rectification
  • High frequency DC-DC conversion up to 80 V input
  • (buck, boost, buck-boost and LLC)
  • 24 V–60 V motor drives
  • High power density DC-DC modules from
  • 40 V – 60 V to 5 V – 12 V
  • Synchronous rectification
  • Solar MPPT

Benefits

  • Ultra-low QG for high frequency
  • PQFN package with backside thermal pad
  • No reverse recovery
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.
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