EPC2366: 40 V, 68 A Enhancement-Mode GaN Power Transistor

VDS, 40 V
Typical RDS(on), 0.8 mΩ
ID, 68 A
Pulsed ID, 360 A

EPC2366 GaN PowerIC
Package Size: 3.3 x 2.6 mm

Applications

  • High-performance, high power-density DC-DC conversion
  • High frequency DC-DC conversion
  • Synchronous rectifiers

Benefits

  • Ultra-low QG for high frequency
  • Best in class RON x QG Figure of Merit (> 12 mΩ nC)
  • PQFN package with backside thermal pad
  • No reverse recovery
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.
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