Improving Thermal Performance with Chip–Scale Packaged Gallium Nitride Transistors

With power converters demanding higher power density, transistors must be accommodated in an ever decreasing board space. Beyond gallium nitride based power transistors’ ability to improve electrical efficiency, they must also be more thermally efficient. In this article we will evaluate the thermal performance of chip-scale packaged enhancement-mode GaN field effect transistors (eGaN^® FETs) and compare their in-circuit electrical and thermal performance with state-of-art silicon (Si) MOSFETs.

Bodo's China
October, 2016
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