The EPC2070 offers power systems designers a 100 V, 23 mΩ, power transistor capable of 34 A pulsed in an extremely small chip-scale package. These new devices are ideal for applications such as 60 W, 48 V power converters, Lidar, and LED lighting.
EL SEGUNDO, Calif. — December 2021 — Efficient Power Conversion (EPC) announces the EPC2070, a 100 V GaN transistor with a maximum RDS(on) of 23 mΩ and a 34 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.
Applications demanding higher efficiency and power density no longer have to choose between size and performance. In addition, the low cost of the EPC2070 brings the performance of GaN FETs at a price comparable to silicon MOSFETs. Applications benefiting from this performance, small size, and low cost include 48 V input power converters up to 60 W for computing and telecom systems, Time of flight (ToF) modules using VSCEL lasers for camera modules, laptops and smart phones, LED Lighting, and Class-D audio.
“The ability of eGaN based power devices to operate efficiently at high frequency widens the performance and cost gap with silicon. The 100 V, EPC2070, is a great addition to our 5th generation family of products offering designers the ability to go to higher power densities than what is possible with silicon MOSFETs.” said Alex Lidow, EPC’s CEO.
The EPC90141 development board is a 100 V maximum device voltage half bridge with onboard gate drives, featuring the EPC2070 eGaN FETs. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2070.
Price and Availability
The EPC2070 eGaN FET is priced for 2.5K units at $0.67 each
The EPC90141 development board is priced at $123.75/each
EPC2070 and EPC90141 are available for purchase from Digi-Key at https://www.digikey.com/en/supplier-centers/epc
EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low-cost satellites.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.