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Using GaN FETs to Burst Through 5 kW/in3 in a 48 V to 12 V LLC Converter
LLC resonant converters have emerged as the preferred topology for an intermediate 48 V to 12 V conversion due to their high efficiency, high power density and good dynamic response. The outstanding performance resulting from the combination of this topology with GaN transistors has been demonstrated in the past. This article presents how the newest generation of GaN devices, such as those from EPC, continues to push the envelope even further.
Bodo’s Power Systems