Gallium Nitride (GaN) FETs have revolutionized the power electronics industry, offering advantages such as smaller size, faster switching, higher efficiency, and lower costs compared to traditional silicon MOSFETs. However, the rapid evolution of GaN technology has sometimes outpaced the development of dedicated GaN-specific gate drivers and controllers. Consequently, circuit designers often turn to generic gate drivers designed for silicon MOSFETs, necessitating careful consideration of various factors to ensure optimal performance.

Bodo’s Power Systems
February, 2024
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