El Segundo, CA — May 2025 – Efficient Power Conversion (EPC), the leader in enhancement-mode gallium nitride (GaN) power transistors and ICs, announces the availability of the EPC2366, a 40 V, 0.8 mΩ device designed to displace legacy low-voltage silicon MOSFETs in demanding applications such as high-performance DC-DC converters and synchronous rectifiers.
With industry-leading RDS(on) x QG figure of merit (10 mΩ·nC), zero reverse recovery, and excellent thermal performance, the EPC2366 delivers higher efficiency, faster switching, and greater power density in a compact 3.3 mm x 2.6 mm PQFN package. The EPC2366 enables higher frequency operation and reduced system size for high density 48 V converters in AI servers and datacom, high frequency synchronous rectifiers, and 24 V battery powered motor drives.
“With the EPC2366, and upcoming lower voltage parts, we are expanding the GaN beachhead across low-voltage applications that have long been dominated by silicon,” said Alex Lidow, EPC CEO and co-founder.
Availability
Engineering samples are available for qualified designs. Contact EPC to discuss your application.
About EPC
EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low-cost satellites.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Press contact: Efficient Power Conversion: Renee Yawger tel: +1.908.619.9678 email: [email protected]