This paper examines the impact of parasitic capacitances on the dynamic current sharing behaviour of Gallium Nitride (GaN) field-effect transistors (FETs) operating in parallel configurations. As GaN technology continues to gain prominence in high-performance power electronic systems, paralleling multiple devices has become a common strategy to increase current-handling capability.
Salvatore Musumeci PhD, Vincenzo Barba PhD, Michele Pastorelli Professor, Marco Palma MSc
ScienceDirect
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