美国国家半导体推出业界首款针对增强型氮化镓功率FET的100V半桥栅极驱动器 Posted Monday, July 11, 2011 高度集成的半桥栅极驱动器提高了高压应用的功率密度和效率 EEFocus 閱讀全文 Related articles GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs Si vs. GaN vs. SiC: Which process and supplier are best for my power design? GaN-on-Si Based FETs Foster New Applications Efficient Power Conversion - Enhancement-mode Gallium Nitride Transistor EPC named to EDN Hot 100 Products