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Facts Say About An Account from a Scientist: he saved the world's 15% energy consumption prior. Now, he discovers silicon's replacement material

Facts Say About An Account from a Scientist: he saved the world's 15% energy consumption prior. Now, he discovers silicon's replacement material

This scientist got his Ph.D 40 years ago who saved the world's 15% energy consumption at one time. He is continuing his journey of innovations now in discovering silicon's replacement material for humankind.

My father always taught me that the true worth of an individual is measured based on their contribution to society. As I entered graduate school in 1975 I knew my passion was in the field of semiconductors, and I felt my best contribution to society would come from finding a successor to silicon. I did my graduate work in Gallium Arsenide, but realized by the time I received my PhD in 1977 that Gallium Arsenide’s prospects were limited as a semiconductor due to the basic materials properties, I went to work applying everything I learned to making better devices in silicon.

Fortune China
June 15, 2017
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EPC Joining PCIM Asia 2017 For Knowledge Exchange with Engineers on How to Choose among 6.78 MHz Amplifier Topologies for High Power, Highly-resonant Wireless Charging Applications

EPC Joining PCIM Asia 2017 For Knowledge Exchange with Engineers on How to Choose among 6.78 MHz Amplifier Topologies for High Power, Highly-resonant Wireless Charging Applications

EL SEGUNDO, Calif. — June 21st, 2017 -- Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, enables a lower-cost, single transmit amplifier solution that can wirelessly charge devices, regardless of the standard used in the receiving device.

Meet EPC experts on power management at PCIM Asia Exhibition and Conference on June 28th, 2017 at 11 a.m. at Meeting Room 2, B2 of Shanghai World Expo Exhibition and Convention Center in China. Dr. Michael de Rooij, Vice President of Application Engineering, EPC, will share with engineers about a choice among topologies to achieve customer-oriented designs for high power, highly resonant wireless charging applications.

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Wolfram Krueger Joins Efficient Power Conversion (EPC) as Vice President of European Sales

Wolfram Krueger Joins Efficient Power Conversion (EPC) as Vice President of European Sales

Mr. Krueger to direct EPC’s European sales organization and assist customers in adopting eGaN® FETs and Integrated Circuits for leading-edge power conversion systems

EL SEGUNDO, Calif. — June 2017 — To support its accelerating growth, Efficient Power Conversion Corporation (EPC) is proud to announce that Wolfram Krueger has joined the EPC leadership team as Vice President of European sales. Mr. Krueger has over 30 years of sales operation experience within the semiconductor industry. His primary responsibilities at EPC are creating and implementing sales and marketing strategies to achieve the company’s sales objectives throughout Europe. He is based in Cologne, Germany.

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GaN FETs Drive Fidelity and Efficiency in Class-D Audio Amplifiers

GaN FETs Drive Fidelity and Efficiency in Class-D Audio Amplifiers

With the current maturity of Class-D audio amplifier architectures, amplifier fidelity and efficiency limitations are primarily at the device level. Silicon MOSFETs have been evolving for almost forty years, and their progress towards a perfect switch has slowed dramatically. There are some fundamental characteristics of MOSFETs that degrade sound quality and efficiency. In 2010, the enhancement mode Gallium nitride (GaN) power FET was introduced by Efficient Power Conversion (EPC), providing a large step towards the perfect switch.

Audio Engineering Society
May 11, 2017
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Rompower Announces The AC/DC Laptop Power Adaptor Technology Capable of 94% Efficiency, 20 W/in3 Power Density in an Incredibly Small Package

Rompower Announces The AC/DC Laptop Power Adaptor Technology Capable of 94% Efficiency, 20 W/in3 Power Density in an Incredibly Small Package

Taking advantage of the high performance of eGaN® FETs, Rompower Energy Systems has announced a reference design for a tiny, 65 W, 94% efficient AC/DC power adaptor for laptops and other mobile devices.

TUCSON, Az. – June 2017 – Rompower Energy Systems, an internationally recognized research and development company in the field of power conversion, announces the availability of technology for an extremely small, highly efficient AC/DC power adapter. In the quest for higher power density, the efficiency of the adapter is critical in order to decrease the heat dissipation. The reference design is measuring just 3.19 cubic inches in size, this adapter provides 65 W of power at greater than 94% efficiency over the entire input voltage range (90 Vac – 264 Vac).  The adapter has a power density of 20 W/in3. This high efficiency means that the device runs cooler than standard AC/DC adapters.

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Efficient Power Conversion (EPC) Introduces High Frequency Monolithic Gallium Nitride Half Bridge Enabling 12 V to 1.8 V System Efficiency Over 85% at 5 MHz at 14 A Output

Efficient Power Conversion (EPC) Introduces High Frequency Monolithic Gallium Nitride Half Bridge Enabling 12 V to 1.8 V System Efficiency Over 85% at 5 MHz at 14 A Output

EPC2111 GaN half bridge offers power systems designers a solution that increases efficiency for complete overall point-of-load system applications over 85% at 14 A when switching at 5 MHz and over 80% when switching at 10 MHz and converting from 12 V to 1.8 V.

EL SEGUNDO, Calif. — June2017 — EPC announces the EPC2111, 30 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated.  This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2111 is ideal for high frequency 12 V to point-of-load DC-DC conversion.

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48V-to-1V Conversion - the Rebirth of Direct-to-Chip Power

48V-to-1V Conversion - the Rebirth of Direct-to-Chip Power

During last week's PCIM Europe event in Nuremberg, Germany, direct 48V-to-1V power conversion architectures were a significant topic. “The use of GaN switches in 48V-to-1V direct dc-dc converters can improve system performance by 30%, compared with today’s best silicon-based designs,” commented Alex Lidow, CEO of Efficient Power Conversion.

PowerPulse
May 31, 2017
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This Wireless Desktop Could Foreshadow Our Future Without Cords

This Wireless Desktop Could Foreshadow Our Future Without Cords

Wireless charging promises a cord-free future, one that offers freedom from being tethered to the end of a charging cable. One company might have its finger on the pulse for this wirelessly powered future. Alexander Lidow is the CEO and founder of Efficient Power Conversion, a company looking to expand upon its namesake. EPC most notably displays how it wants to revolutionize wireless charging with a seemingly simple desktop.

Interesting Engineering
May 23, 2017
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Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS

Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS

EPC2046 GaN power transistor offers power systems designers a 200 V, 25 mΩ power transistor about 12 times smaller than equivalently rated silicon MOSFETs for wireless power, multi-level AC-DC power supplies, robotics, and solar micro inverters.

EL SEGUNDO, Calif. — May 2017 — EPC announces the EPC2046 power transistor for use in applications including wireless power, multi-level AC-DC power supplies, robotics, solar micro inverters, and low inductance motor drives. The EPC2046 has a voltage rating of 200 V and maximum RDS(on) of 25 mΩ with a 55 A pulsed output current.

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How2 Cut The Power Cord: Wireless Power Is Ready For Prime Time

How2 Cut The Power Cord: Wireless Power Is Ready For Prime Time

Wireless charging is not a new topic—it has been talked about for quite a while. Unfortunately, it has not seen widespread consumer acceptance. But, with a recently developed innovative approach to the design of transmission coils, wireless power is ready for widespread application.

How2Power
May, 2017
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GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs

GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs

Gallium nitride (GaN) power transistors designed for efficient power conversion have been in production for seven years. New markets, such as light detection and ranging, envelope tracking, and wireless charging, have emerged due to the superior switching speed of GaN. These markets have enabled GaN products to achieve significant volumes, low production costs, and an enviable reliability reputation. All of this provides adequate incentive for the more conservative design engineers in applications such as dc–dc converters, ac–dc converters, and automotive to start their evaluation process. So what are the remaining barriers to the conversion of the US$12 billion silicon power metal–oxide–semiconductor field-effect transistor (MOSFET) market? In a word: confidence.

Alex Lidow
March, 2017
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EPC Releases Video Series on How GaN is Changing the Way We Live

EPC Releases Video Series on How GaN is Changing the Way We Live

Produced by industry experts, Efficient Power Conversion has posted six videos showing active end-use applications such as a wireless power tabletop, high performance LiDAR, single-stage 48 V – 1.8 V DC-DC conversion, and precision motor drive control using gallium nitride transistors and integrated circuits.

EL SEGUNDO, Calif. – April 2017 – Efficient Power Conversion Corporation (www.epc-co.com) has created and posted to its website six short videos presenting end-customer applications using eGaN® FETs and ICs. These videos show how GaN technology is changing the way we live and challenging power systems design engineers to incorporate the high performance of gallium nitride FETs and ICs into their next generation power system designs.

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Power chips, but not as we know them

Power chips, but not as we know them

Max Smolaks welcomes gallium nitride, a new material which will replace silicon in the power chain

For the past 35 years, most power supplies have relied on power MOSFETs (metal oxide semiconductor field effect transistors) – voltage-controlled devices made of silicon that are used to switch and condition electricity.

Data Center Dynamics
April 19, 2017
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Podcast: Cut the Cord! - How GaN Enables the Wireless Home

Podcast: Cut the Cord! - How GaN Enables the Wireless Home

I was led to believe we were heading for a wireless world but a look behind my TV tells a very different story when I see all those wires everywhere. Not to mention the increasing number of BRIDGES for IoT devices. We were hoping to talk about the wireless powered home and how GaN (gallium nitride) is making that possible! When it comes to gallium nitride, there is only one man to speak with, and he's truly changing the world at EPC. He first appeared on EP180 talking about Why Gallium Nitride Is About To Disrupt Silicon then returned on 203 The LIDAR Technology Behind An X-Ray Pill. But he has returned to today to talk about how it can wireless charge anything, and it will blow your mind. Dr. Alex Lidow, is the CEO and co-founder of Efficient Power Conversion and he is going to talk about how tech will make power cords disappear and how EPC is leading the charge in the wireless space.

The Tech Blog Writer Podcast
April 14, 2017
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Efficient Power Conversion (EPC) Publishes Ninth Reliability Report Documenting Millions of GaN Technology Device Hours with Zero Failures After Rigorous Stress Testing

Efficient Power Conversion (EPC) Publishes Ninth Reliability Report Documenting Millions of GaN Technology Device Hours with Zero Failures After Rigorous Stress Testing

EPC’s Phase Nine Reliability Report documents a combined total of over 9 million GaN stress device-hours with zero failures. This report focuses on thermo-mechanical board level reliability, describing for the first time, a predictive model for solder joint integrity and showing the superior reliability of wafer level chip-scale packaging (WLCSP) GaN technology over comparable packaged devices.

EL SEGUNDO, Calif.— April 2017 — EPC announces its Phase Nine Reliability Report showing the results of a rigorous set of thermo-mechanical board level reliability testing. The Phase Nine Reliability Report adds to the growing knowledge base previously published in EPC’s first eight reports and represents an ongoing commitment to study, learn, and share information on the reliability of GaN technology.

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How GaN Power Transistors Drive High-Performance Lidar: Generating ultrafast pulsed power with GaN FETs

How GaN Power Transistors Drive High-Performance Lidar: Generating ultrafast pulsed power with GaN FETs

Light detection and ranging (lidar) is a versatile light-based remote sensing technology that recently has been the subject of great attention. It has shown up in a number of media venues and has even led to public debate about the engineering choices of a well-known electric car company, Tesla Motors. While this article is not going to enter the fray, it will provide some background on lidar and discuss its strong connection to power electronics technologies.

Published in: IEEE Power Electronics Magazine ( Volume: 4, Issue: 1, March 2017 )
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