Superior characteristics of eGaN^® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems.

EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) today announces the immediate availability of a complete demonstration wireless power transfer kit. The 40 V (EPC9111) or 100 V (EPC9112) wireless kits have three components:

With high-voltage GaN devices close to commercialization, manufacturers can, at last, look forward massive market growth.

Compound Semiconductor
July, 2014
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This installment will address an eGaN^® FET module designed as a way for power conversion systems designers to easily evaluate the exceptional performance of gallium nitride transistors.

EEWeb
By: Alex Lidow
June, 2014

The superior characteristics of eGaN^® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems.

EL SEGUNDO, Calif.—June, 2014 — Efficient Power Conversion Corporation (EPC) today announce the introduction of demonstration boards for wireless power transfer in an innovative high performance topology; Zero Voltage Switching (ZVS) Class-D. The EPC9506 and EPC9507 amplifier (source) boards utilize the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems with greater than 75% efficiency.

Overall, 2020 could see an estimated device market size of almost $600M, leading to approximately 580,000 x 6” wafers to be processed. Ramp-up will be quite impressive starting in 2016, at an estimated 80% CAGR through 2020, based upon a scenario where EV/HEV begins adopting GaN in 2018-2019. The power supply/PFC segment will dominate the business from 2015-2018, ultimately representing 50% of device sales. At that point, automotive will then catch-up.

Yole Development
June, 2014
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Gallium Nitride (GaN) based power devices are rapidly being adopted due to their ability to operate at frequencies and switching speeds beyond the capability of Silicon power devices.

Power Electronics Europe
By: Alex Lidow, Ph.D., Johan Strydom, Ph.D., David Reusch, Ph.D.
June, 2014

Dr. Glaser will be creating benchmark power converter designs and assisting customers in the use of eGaN FETs^® for high frequency, high performance power conversion systems

EL SEGUNDO, Calif.—June 2014 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. John Glaser has joined the EPC engineering team as Director, Applications Engineering.

According to the latest report from Yole Développement, the GaN power industry is set for significant growth in the future.

Compound Semiconductor
June 12, 2014
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Yole Développement interviewed Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion (EPC).

Yole Développement
June, 2014
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High frequency enhancement mode transistors, such as the EPC8000 series eGaN^® FETs from EPC, have been widely available since September 2013 and enable simplified designs at RF frequencies. In this installment, we present the RF characteristics of the EPC8000 series devices and show their implementation in a pulsed class A amplifier. The amplifier is pulsed to allow operation within the thermal operating limits of the device, since RF device power dissipation is typically on the same order of magnitude as the RF power delivered, unlike switching devices, such as the EPC8000 series, that operate well above 95 % efficiency. The EPC8000 series FETs, designed originally for switching power conversion applications, otherwise exhibit excellent RF characteristics and in conclusion will be compared with similar specified LDMOS.

EEWeb
By: Alex Lidow
May 29, 2014

Hundreds of billions of dollars have been spent to make the silicon technology supply chain incredibly efficient. How can emerging, high performance GaN transistors compete against this huge installed base of silicon-based production? Simple, the production of GaN transistors leverages the installed silicon supply chain, which significantly lowers the cost of GaN transistors!

Power Systems Design
By Alex Lidow, Ph.D.
May 27, 2014

DrGaN^PLUS EPC9202 100 V, 10 A board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN® power transistors

EL SEGUNDO, Calif.— May 2014 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors, Efficient Power Conversion Corporation (EPC) introduces DrGaN^PLUS evaluation boards. These boards are proof-of-concept designs that integrate all necessary components of a half-bridge circuit into a single, extremely small PCB-based module that can be readily mounted to demonstrate the excellent performance of a GaN transistor power conversion solution.

On June 4 IEEE PELS will offer a webinar by Alex Lidow and Michael de Rooij discussing the contribution of eGaN® power transistors to increasing efficiency in wireless power transfer systems.

EL SEGUNDO, Calif.— May 2014 — Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on June 4th from 10:30 AM to 11:30 AM (EDT).

Silicon has reached theoretical limits of performance in power conversion. Gallium nitride (GaN) and silicon carbide (SiC) will displace much of the $12B market for silicon power MOSFETs. There is product in production today that is 5-10 times better than the theoretical limit of silicon.

Bodo’s Power Systems
By Alex Lidow, Ph.D.
May, 2014

The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article, EPC will focus on loosely coupled coils, highly-resonant wireless solutions suitable for the A4WP standard operating at either 6.78 MHz or 13.56 MHz unlicensed Industrial, Scientific and Medical (ISM) bands.

Bodo’s Power Systems
By Alex Lidow, Ph.D. and Michael De Rooij, Ph.D
May, 2014

Produced by industry experts, EPC has posted an eleven-part educational video podcast series on the theory, design basics and applications for gallium nitride power transistors.

EL SEGUNDO, Calif. – April 2014 - Efficient Power Conversion Corporation (www.epc-co.com) has created and posted on line an eleven-part educational video podcast series designed to provide power system design engineers a technical foundation and application-focused toolset on how to design more efficient power conversion systems using gallium nitride-based transistors.

EPC9016 development board features 40 V, 33 A enhancement mode gallium nitride (eGaN^®) FETs in parallel operation increasing current capability by 67% and optimum layout techniques maximize efficiency.

EL SEGUNDO, Calif.— April, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9016 half-bridge development board for high current, high step-down voltage, buck Intermediate Bus Converter (IBC) applications using eGaN FETs. In this application two low-side (synchronous rectifier) field effect transistors (FETs) are connected in parallel since they will be conducting for a much longer period compared to the single high side (control) FET.

This column evaluated the ability to parallel eGaN^® FETs for higher output current applications by addressing the challenges facing paralleling high speed, low parasitic devices, and demonstrated an improved paralleling technique. For experimental verification of this design method, four parallel half bridges in an optimized layout were operated as a 48 V to 12 V, 480 W, 300 kHz, 40 A buck converter, and achieved efficiencies above 96.5%, from 35% to 100% load. The design method achieved superior electrical and thermal performance compared to conventional paralleling methods and demonstrated that high speed GaN devices can be effectively paralleled for higher current operation.

EEWeb
By: Alex Lidow
April, 2014

Alex Lidow, EPC CEO and co-founder, will be presenting results of a newly released family of enhancement mode (GaN®) HEMT transistors designed for high frequency operation into the 10 MHz range. The presentation will also highlight the stability of these devices under radiation exposure making them an ideal choice for high reliability applications.

EL SEGUNDO, Calif. — March, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be presenting at the 39th Annual Government Microcircuit Applications and Critical Technology (GOMACTech) Conference which will be held in Charleston, South Carolina on April 3rd.

APEC 2014 is over. Held this year in Fort Worth, Texas, the annual IEEE power electronics conference left a number of impressions. For one, gallium-nitride (GaN) power transistors are evolving in interesting ways…

Electronic Design
March, 2014
http://electronicdesign.com/blog/pmbus-gan-and-more-dominate-apec-2014