EPC’s CEO and Co-Founder, Alex Lidow, has spent much of his career developing a superefficient replacement for silicon. Hear his interview on Bloomberg TV.

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Bloomberg TV
February 17, 2015

Gallium nitride (GaN) is one of the technologies that could well displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices conduct better and switch faster. In this short podcast, Alex Lidow talks about the differences between GaN and silicon power devices.

Power Electronic TIPS
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Intent on flooding power device markets with GaN-on-silicon FETs, Alex Lidow, EPC, talks to Compound Semiconductor about future market opportunities.

Compound Semiconductor
July, 2014
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Yole Développement interviewed Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion (EPC).

Yole Développement
June, 2014
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EPC's David Reusch talks about enhancement mode GaN and the package-less package that helps reduce losses.

Electronic Products
October, 2013
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In a featured interview with EEWeb Pulse EPC’s CEO, Alex Lidow, discusses what steps need to be taken to help with wide adoption of GaN devices.

EEWeb Pulse
June, 2013

Author: By Alix Paultre, Editorial Director, PSD
Date: 3/12/2013

In this podcast, we talk to Alex Lidow of Efficient Power Conversion (EPC) about GaN devices and their impact on the power industry. EPC is a leader in enhancement-mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN^®) FETs as power MOSFET replacements in applications such as point-of-load converters, Power over Ethernet (PoE), server and computer DC-DC converters, LED lighting, cell phones, RF transmission, solar micro-inverters, and class-D audio amplifiers with device performance many times greater than silicon power MOSFETs.

http://www.powersystemsdesign.com/paultre-on-power---power-gan?a=1&c=6282

Alex Lidow, the co-inventor of the HEXFET power MOSFET and CEO of Efficient Power Conversion (EPC), describes how their Enhancement Mode Gallium Nitride Transistors (eGAN FETs) work to bring tremendous size and performance advantages over silicon power MOSFETs.

Alex Lidow is interviewed by ECN's Editorial Director, Alix Paultre, on the Tinker's Toolbox, ECN's audio interview website.  The interview explores the attributes of GaN technology, applications opened as a result of GaN's superior performance to MOSFETs and reasons for the take-up of eGaN FET products over the past year.

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