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Delivering Efficient Power Conversion with Package-Free HEMTs

Packaging has its downsides: It increases the footprint and the price of a power MOSFET, while degrading its performance through unwanted increases in resistance and inductance. The best solution is to ditch the package, a step that allows GaN HEMTs to be cost-competitive with silicon incumbents, argues Alex Lidow from Efficient Power Conversion Corporation.

Compound Semiconductor
June, 2013

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eGaN FET-Silicon Power Shoot-Out Volume 14, Part 1: eGaN FET Small Signal RF Performance

Even though the eGaN FET was designed and optimized as a power-switching device, it also exhibits good RF characteristics. This article, the first of a two-part series on RF performance, focuses on RF characterization in the frequency range of 200 MHz through 2.5 GHz.

By: Michael de Rooij, Ph.D., Executive Director of Applications Engineering, Efficient Power Conversion
Johan Strydom, Ph.D., Vice President of Applications, Efficient Power Conversion
Matthew Meiller, President, Peak Gain Wireless

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Exploring gallium nitride technology

It has been three years since the commercialization of gallium nitride (GaN) devices as MOSFET replacements in a commercial DC-DC application. With the emergence of GaN devices, coupled with now attainable applications previously not achievable with MOSFET-based FETs, a favorable stage has been set for GaN-device developers to release emerging application potential largely unimagined and untapped.

EETimes Asia
May 16, 2013

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Si vs. GaN vs. SiC: Which process and supplier are best for my power design?

By: Steve Taranovich, EDN
March 15, 2013

As the race toward leadership in the power element continues to evolve, industry experts have said that by mid-2013 about half a dozen GaN, Si, and SiC suppliers will reveal process enhancements, new architectures, and the latest new capabilities that will bring new choices and tools to the industry.

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Paultre on Power - Power GaN

Author: By Alix Paultre, Editorial Director, PSD
Date: 3/12/2013

In this podcast, we talk to Alex Lidow of Efficient Power Conversion (EPC) about GaN devices and their impact on the power industry. EPC is a leader in enhancement-mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN®) FETs as power MOSFET replacements in applications such as point-of-load converters, Power over Ethernet (PoE), server and computer DC-DC converters, LED lighting, cell phones, RF transmission, solar micro-inverters, and class-D audio amplifiers with device performance many times greater than silicon power MOSFETs.

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Efficient Power Conversion (EPC) Introduces Development Board Featuring 100 V Enhancement Mode Gallium Nitride (eGaN) FETs

EPC9010 development board features dedicated eGaN driver to facilitate rapid design of high frequency switching power conversion systems using the 100 V EPC2016 eGaN FET

EL SEGUNDO, Calif.— February, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride (eGaN) field effect transistor (FET) in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

The EPC9010 development board is a 100 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC2016 enhancement mode (eGaN) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

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eGaN FETs Increase Efficiency, Power Density in Industrial POL Converters

Designers of point of load (POL) converters used in 24 VDC systems traditionally have had to decide between the high cost of an isolated converter and the low frequency and efficiency of a buck converter. When compared with the 12 V POL converter common in computing systems, the higher voltage of the 24 V POL converter increases FET voltage to at least 40 volts to accommodate switch-node ringing and increases commutation and COSS losses. eGaN FETs, from EPC, offer ultra-low QGD for low commutation losses and low QOSS for lower losses when charging and discharging the output capacitance. In addition, the innovative Land Grid Array (LGA), wafer level packaging of EPC’s eGaN FETs allow ultralow inductance in both the high frequency power loop and gate drive loop, and most importantly, the path common to these loops, known as the common source inductance (CSI) to help minimize current commutation losses. Low charge and CSI of eGaN FETs allow designers to push power density higher by pushing frequency higher without the efficiency penalty of traditional MOSFETs.

David Reusch, Ph.D., Director, Applications
Stephen L. Colino, V.P., Sales & Marketing

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EPC named a Constant Contact 2012 All Star

EPC is honored to be recognized as a 2012 All Star by Constant Contact. This status is an annual designation that only 10% of Constant Contact customers achieve. It is awarded to companies making extra efforts to engage customers. We would like to thank all who have supported us. If you are not already receiving our newsletter please join our list @

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eGaN FET-Silicon Power Shoot-Out Volume 13, Part 1: Impact of Parasitics on Performance

The ability of enhancement mode gallium nitride based power devices, such as the eGaN® FET, to achieve higher efficiencies and higher switching frequencies than possible with silicon MOSFETs has been demonstrated for a variety of applications. With improvements in switching figure of merit provided by eGaN FETs, the packaging and PCB layout parasitics are critical to high performance. This first part of this article will study the effect of parasitic inductance on performance for eGaN FET and MOSFET based point of load (POL) buck converters operating at a switching frequency of 1 MHz, an input voltage of 12 V, an output voltage of 1.2 V, and an output current up to 20 A.

By David Reusch, Ph.D., Director, Applications, Efficient Power Conversion Corporation

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Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Applied Power Electronics And Exposition Conference (APEC®)

EPC CEO and applications experts will conduct a half-day seminar and technical presentations on GaN FET technology and applications at the IEEE APEC 2013 power electronics industry conference.

EL SEGUNDO, Calif. — February, 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting an educational seminar and several application-focused technical presentations at APEC 2013. The conference will be held in Long Beach, California from March 17th through the 21st.

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Efficient Power Conversion Development Board Demonstrates Ease of Designing Power Systems with 200 V eGaN FETs

EPC9004 features eGaN® FETs in combination with dedicated GaN FET gate driver from Texas Instruments

EL SEGUNDO, Calif.—February 2013 — Efficient Power Conversion Corporation (EPC) today announced the availability of the EPC9004 development board, featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). This board demonstrates how recently introduced IC gate drivers, optimized for GaN FETs, make the task of transitioning from silicon power transistors to higher performance eGaN FETs simple and cost effective.

The EPC9004 development board is a 200 V peak voltage, 2 A maximum output current, half bridge featuring the EPC2012 eGaN FET. The EPC2012 is used in combination with the UCC27611 high-speed gate driver from Texas Instruments, thus reducing time and complexity for designing high frequency, high performance power systems.

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eGaN FET-Silicon Power Shoot-Out Part 12: Optimizing Dead Time

Initial shoot-out articles showed that eGaN® FETs behave similarly to silicon devices and can be evaluated using the same performance metrics. Although eGaN FETs perform significantly better by most metrics, the eGaN FET ‘body-diode’ forward voltage is higher than its MOSFET counterpart and can be a significant loss component during dead-time. Body diode forward conduction losses alone do not make up all dead-time dependent losses. Diode reverse-recovery and output capacitance losses are also important. In this article, we discuss dead-time management and the need to minimize all dead-time losses.

By Johan Strydom, Ph.D., Vice President of Applications, EPC Power Electronics Technology

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EPC Wireless Power Transfer Demonstration System named a Top 10 Wireless Charging Development for 2012 by PowerPulse.Net

Wireless charging will be a fast-growing segment of the power electronics industry in 2013. Significant developments began accelerating last year. The “Top 10” developments selected by the PowerPulse editors highlight important trends in wireless charging that will continue in 2013 and beyond.

EPC announced a high efficiency wireless power demonstration system utilizing the high frequency switching capability of gallium nitride transistors. eGaN® FETs from EPC are well suited for these systems because of their ability to operate efficiently at high frequency, voltage, and power. This wireless power demonstration system jointly developed by EPC and WiTricity is a class-D power system operating at 6.78 MHz, and capable of delivering up to 15 W to a load. The purpose of this demonstration system is to simplify the evaluation process of the wireless power technology. The system includes all the critical components in a single system that can be easily connected to demonstrate the powering of a device with wireless energy transfer.

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Low-Cost GaN e-mode Transistors and Diodes

January 2, 2013

Within the power electronics industry, GaN technology is growing out of its niche. The first GaN transistors are winning a growing share of the power electronics market. By Steve Soffels, Denis Marcon, and Stefaan Decoutere, IMEC

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