Unlock the potential of GaN-based motor drives with our expert guide on dead-time optimization. Boost efficiency, enhance performance, and drive ROI.

Learn why R_DS(ON) shouldn't be your main criteria for selecting switching devices. EPC's insights reveal a more effective approach for evaluating GaN FETs.

When “displacement” technologies such as EPC’s GaN power FETs and ICs are introduced and new levels of performance are possible, modeling your design offers comfort and insight to your circuits’ capabilities and needs. This blog post discussed the latest addition to the “EPC GaN Power Bench, our on-line modeling tool library, EPC’s GaN FET Thermal Calculator! 

GaN FETs can switch significantly faster than Si MOSFETs causing many system designers to ask − how does higher switching speeds impact EMI?

This blog discusses simple mitigation techniques for consideration when designing switching converter systems using eGaN^® FETs and will show why GaN FETs generate less EMI than MOSFETs, despite their fast-switching speeds.