Learn about what key factors you should consider when selecting a GaN gate driver. Make the best choice for your power electronics design here.

When “displacement” technologies such as EPC’s GaN power FETs and ICs are introduced and new levels of performance are possible, modeling your design offers comfort and insight to your circuits’ capabilities and needs. This blog post discussed the latest addition to the “EPC GaN Power Bench, our on-line modeling tool library, EPC’s GaN FET Thermal Calculator! 

GaN FETs can switch significantly faster than Si MOSFETs causing many system designers to ask − how does higher switching speeds impact EMI?

This blog discusses simple mitigation techniques for consideration when designing switching converter systems using eGaN^® FETs and will show why GaN FETs generate less EMI than MOSFETs, despite their fast-switching speeds.