GaN Talk a blog dedicated to crushing silicon
Term: Design
4 post(s) found

Feb 22, 2024

Why you shouldn’t use Rds(on) to select and compare devices in switching power converters

Andrea Gorgerino, Director of Global Field Application Engineering

Learn why RDS(ON) shouldn't be your main criteria for selecting switching devices. EPC's insights reveal a more effective approach for evaluating GaN FETs.

Nov 14, 2023

Selecting the Best GaN Gate Driver

Chang-Woo Ryu, Senior FAE, Korea

Learn about what key factors you should consider when selecting a GaN gate driver. Make the best choice for your power electronics design here.

May 07, 2022

How to Use the GaN FET Thermal Calculator to Boost Reliability and Shorten Time-To-Market in Power Electronics System Designs

Assaad El Helou, Senior Thermal/Mechanical Engineer, Applications Engineering

When “displacement” technologies such as EPC’s GaN power FETs and ICs are introduced and new levels of performance are possible, modeling your design offers comfort and insight to your circuits’ capabilities and needs. This blog post discussed the latest addition to the “EPC GaN Power Bench, our on-line modeling tool library, EPC’s GaN FET Thermal Calculator

May 19, 2020

eGaN FETs Are Low EMI Solutions!

Michael de Rooij, Ph.D., Vice President, Applications Engineering

GaN FETs can switch significantly faster than Si MOSFETs causing many system designers to ask − how does higher switching speeds impact EMI?

This blog discusses simple mitigation techniques for consideration when designing switching converter systems using eGaN® FETs and will show why GaN FETs generate less EMI than MOSFETs, despite their fast-switching speeds.