EPC Technical Articles

How to GaN: Improving Electrical and Thermal Performance

In this installment of the ‘How to GaN’ series we will discuss the 4th generation of eGaN FETs in 48 VIN applications and evaluate the thermal performance of the chipscale packaging of high voltage lateral eGaN FETs.

EEWeb
By: Alex Lidow
December, 2014

Profiles in Design: Alex Lidow, Ph.D.

DesignCon 2015’s Thursday (January 29th) keynote speaker will be Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion Corporation (EPC). For most of his career, Alex has focused on improving the efficiency of power conversion in hopes of reducing the environmental impact of energy production and consumption. As an R&D engineer at International Rectifier, he co-invented the HEXFET power MOSFET. The patents from this invention brought in more than $900M. Alex holds numerous additional patents in power semiconductor technology, including basic patents in power MOSFETs as well as in GaN FETs. He recently co-authored the first textbook on GaN transistors, “GaN Transistors for Efficient Power Conversion”. You can catch Alex’s keynote speech at DesignCon 2015 on Thursday, January 29, 12:00 PM – 12:30 PM.

EDN
December 3, 2014
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How to GaN: Generation 4 eGaN FETs – Widening the Performance Gap with the Aging MOSFET

In this installment of the ‘How to GaN’ series we will discuss a new family of eGaN FETs that is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOFET in high frequency power conversion.

EEWeb
By: Alex Lidow
October, 2014

WiGaN: eGaN FETs for Hard-Switching Converters at High Frequency

This article presents hard-switching buck converter results switching at 10 MHz and gives a breakdown of the converter losses. It will demonstrate the unmatched high frequency performance capability currently available using eGaN® FETs and also highlight the current limitations to pushing to even higher switching frequencies.

EEWeb
By: Alex Lidow
August, 2014

How to GaN: Simplifying Design and Increasing Efficiency with DrGaNPLUS

This installment will address an eGaN® FET module designed as a way for power conversion systems designers to easily evaluate the exceptional performance of gallium nitride transistors.

EEWeb
By: Alex Lidow
June, 2014

How To GaN: eGaN® FETs for High Frequency Switching

In this installment a return to hard-switching converters is made, but with a push to higher frequencies – beyond the practical limits of silicon technology.

EEWeb
By: Alex Lidow
December, 2013

How to GaN: eGaN FETs in Hard Switching Intermediate Bus Converters

In this installment more complex hard switching converters used for isolated DC to DC power conversion will be discussed.

EEWeb
By: Alex Lidow
October, 2013

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