EPC’s DC-DC Conversion handbook is a guide showing how to achieve increased efficiency and power density in Datacom equipment and other power conversion applications using GaN power transistors.

EL SEGUNDO, Calif. – September 2015 – The demand for information is growing at unprecedented rates and society’s insatiable appetite for communication, computing and downloading, is driving this demand. With emerging technologies, such as, cloud computing and the internet of things, not to mention the 300 hours of video being loaded to YouTube every minute, this trend for more and faster access to information is showing no signs of slowing…and this is the challenge that motivated the writing of this practical engineering handbook – DC-DC Conversion: A Supplement to GaN Transistors for Efficient Power Conversion.

120 volt, 60 milliohm EPC2110 dual enhancement-mode gallium nitride power integrated circuit delivers ultra high frequency switching for exceptional performance in wireless power transfer Class-E amplifier applications.

EL SEGUNDO, Calif. – September 2015 – Efficient Power Conversion Corporation (www.epc-co.com) introduces the EPC2110 as the newest member of EPC’s family of enhancement-mode gallium nitride integrated circuits.

New EPC2039 eGaN^® FET offers superior performance, big power in an extremely small package at a very affordable price.

EL SEGUNDO, Calif. — August 2015 — Efficient Power Conversion Corporation (EPC) announces the EPC2039 power transistor, a high power density enhancement-mode gallium nitride (eGaN^®) device. The EPC2039 is an extremely small, 1.82 mm², 80 V_DS, 6.8 A power transistor with a maximum R_DS(on) of 22 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance in power conversion systems due to its high switching capabilities in a very small package.

EPC2106 GaN power transistor offers power systems designers a solution that switches over 2 MHz resulting in no interference with the AM band, reducing costs for filtering, thus making it ideal for low distortion Class-D audio.

EL SEGUNDO, Calif. — August 2015 — EPC announces the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN^® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

New EPC2107 and EPC2108 eGaN^® power integrated circuits include monolithic half bridge and integrated bootstrap functions for A4WP compliant Class 2 and Class 3 solutions. In addition, development boards and complete wireless power solutions – transmit and receive devices – for quick and easy evaluations of these components are available.

EL SEGUNDO, Calif. — July 2015 — EPC announces the EPC2107 (100 V) and EPC2108 (60 V) eGaN half bridge power integrated circuits with integrated bootstrap FET, eliminating gate driver induced reverse recovery loses as well as the need for a high side clamp. This is the first time that a bootstrap FET has been integrated in an eGaN power circuit.

eGaN^®power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable high power density converters.

EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of two eGaN FETs that raise the bar for power conversion performance. These products have a maximum operating temperature of 150°C and pulsed currents capabilities of 260 A (150 V EPC2033) and 140 A (EPC2034). Applications include DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

New eGaN^® power transistors extend EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines

EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of three eGaN FETs designed with a wider pitch connection layout. These products expand EPC’s family of “Relaxed Pitch” devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

New family of eGaN power transistors offer superior performance, smaller size, and high reliability…at the price of a MOSFET.

EL SEGUNDO, Calif.— April 2015 — Efficient Power Conversion Corporation (EPC) announces the 60 V EPC2035 and 100 V EPC2036 eGaN power transistors designed to compete in price, while outperforming silicon. Price, the last barrier to widespread adoption of GaN transistors as silicon MOSFET replacements, has fallen. These products demonstrate that gallium nitride can displace silicon semiconductors and drive the industry back onto the Moore’s Law growth curve.

With the new 100 V EPC2104 eGaN^®half bridge, a system efficiency of a complete buck converter using the EPC2104 is greater than 97% at 22 A switching at 300 kHz, and approaching 97% at 22 A when switching at 500 kHz, achieved when converting from 48 V to 12 V.

EL SEGUNDO, Calif. — April 2015 — EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.

New EPC2029 eGaN^® power transistor extends EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines.

EL SEGUNDO, Calif.—April 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of an eGaN FET designed with a wider pitch connection layout. The first in a new family of “Relaxed Pitch” devices, the EPC2029 80 V, 31 A eGaN FET features a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

DrGaNPLUS EPC9201 30 V, 40 A and EPC9203 80 V, 20 A evaluation boards demonstrate the extreme size reduction and efficiency enhancement for power conversion that can be achieved using high frequency switching eGaN power transistors.

EL SEGUNDO, Calif.— March 2015 — Providing an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corporation (EPC) announces the expansion of its portfolio of DrGaNPLUS evaluation boards. These boards are proof-of-concept designs that integrate all necessary components of a half-bridge circuit into a single, extremely small PCB-based module that can be readily mounted to demonstrate the excellent performance of a GaN transistor power conversion solution.

EPC9115 DC-DC bus converter showcases superior performance achieved using eGaN FETS with designated drivers in a conventional fully regulated, isolated eighth brick DC-DC converter topology.

EL SEGUNDO, Calif. — March 2015 — Efficient Power Conversion Corporation (EPC) introduces the EPC9115, a demonstration design for a 12 V, 42 A output with an input range of 48 V to 60 V. The demonstration board features enhancement-mode (eGaN®) power transistors – the EPC2020 (60 V) and EPC2021 (80V) – along with the LM5113 half-bridge driver and UCC27611 low side driver from Texas Instruments. The power stage is a conventional hard-switched 300 kHz isolated buck converter.

Wireless Power Handbook is a guide to designing an efficient amplifier for a wireless power transfer system, taking advantage of the superior performance of gallium nitride power transistors.

EL SEGUNDO, Calif. – March 2015 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication of a practical engineering handbook designed to provide power system design engineers valuable experiences and points of reference critical to understanding and designing highly efficient wireless power systems using gallium nitride-based transistors. As a supplement to EPC’s GaN Transistors for Efficient Power Conversion, this new practical guide provides step-by-step analysis on the use of GaN transistors in wireless power transfer. /p> Read more

EPC9106 Class-D audio amplifier reference design, using high frequency switching gallium nitride power transistors, demonstrates efficiency enhancement, size reduction and eliminates need for a heat sink while delivering prosumer quality sound.

EL SEGUNDO, Calif. — February 2015 — Efficient Power Conversion Corporation (EPC) introduces the EPC9106, a reference design for a 150 W, 8 ohm Class-D audio amplifier.

Efficient Power Conversion introduces the EPC2102, 60 V and EPC2103, 80 V half bridges, expanding its award winning family of gallium nitride power transistor products.

EL SEGUNDO, Calif. — January 2014 — EPC announces the EPC2102, 60 V and the , 80 V enhancement-mode monolithic GaN transistor half bridges.

EPC2027 eGaN^® FET offers power systems designers a 450 V power transistor capable of 4ns rise times for high frequency DC-DC converters and medical diagnostic instruments.

EL SEGUNDO, Calif. — January 2015 — EPC announces the EPC2027, a 450 V normally off (enhancement mode) power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by high voltage higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, solar power inverters, and LED lighting.

The EPC2101 GaN power monolithic half bridge offers power systems designers a solution that increases efficiency and power density. For a complete buck converter, system efficiency approaches 87% at 14 A, and over 82% at 30 A when switching at 500 kHz and converting from 28 V to 1 V while reducing the board area occupied by transistors by 50% when compared to a discrete solution.

EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2101, 60 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN^® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2101 is ideal for high frequency DC-DC conversion.

EPC2105 GaN half bridge offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 98% at 10 A when switching at 300 kHz and converting from 48 V to 12 V, and 84% at 14 A when switching at 300 kHz and converting from 48 V to 1.0 V.

EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2105, 80 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN^® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2105 is ideal for high frequency DC-DC conversion and enables efficient single stage conversion from 48 V directly to 1 V system loads.

EPC9118 demonstrates size reduction and efficiency enhancement for power conversion readily achieved using high frequency switching eGaN^® FETs for supply voltages up to 48 V or more.

EL SEGUNDO, Calif.—October 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9118, a fully functional buck power conversion demonstration circuit. This board is a 30 V-60 V input to 5 V, 20 A maximum output current, 400 kHz buck converter. It features the EPC2001 and EPC2015 enhancement-mode (eGaN^®) field effect transistors (FETs), as well as the LTC3891 buck controller. This buck converter design is ideal for distributed power solutions in telecom, industrial, and medical applications.

EPC2025 GaN power transistor offers power systems designers a 300 V power transistor capable of 2ns rise times for high frequency DC-DC converters and medical diagnostic instruments.

EL SEGUNDO, Calif. — September 2014 — EPC announces the EPC2025, a 300 V power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, power inverters, and LED lighting.