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New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving.

EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.

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The Smallest 100 V, 2 mΩ GaN FET in the World is Now Shipping from Efficient Power Conversion

The Smallest 100 V, 2 mΩ GaN FET in the World is Now Shipping from Efficient Power Conversion

EPC introduces the 100 V, 2.2 mΩ EPC2071 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — May 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET. 

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Efficient Power Conversion (EPC) to Showcase how GaN is Transforming Power Delivery and Enabling Advanced Autonomy Across Multiple Industries at PCIM 2022

Efficient Power Conversion (EPC) to Showcase how GaN is Transforming Power Delivery and Enabling Advanced Autonomy Across Multiple Industries at PCIM 2022

EPC’s GaN Experts will be available during PCIM Europe 2022, exhibiting various demonstrations of how GaN technology’s superior performance is transforming the delivery of power across many industries, including computing, communications, and emobility.

EL SEGUNDO, Calif. — April 2022 — The EPC team will be delivering multiple technical presentations on gallium nitride (GaN) technology and applications at PCIM Europe 2022 in Nuremburg, 10 – 12 May (see detailed schedule below). In addition, the company will demonstrate its latest eGaN® FETs and ICs in a large variety of customer end products in Hall 9, Stand 113.

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New AEC Qualified Lidar Integrated Circuit from Efficient Power Conversion

New AEC Qualified Lidar Integrated Circuit from Efficient Power Conversion

Efficient Power Conversion (EPC) introduces the latest addition to its family of automotive qualified transistors and integrated circuits offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, and autonomous cars.

EL SEGUNDO, Calif.— April 2022 — EPC announces the introduction of the EPC2221, a common source dual gallium nitride FET rated at 100 V, 58 mΩ, and 20 A pulsed current.  The EPC2221 can be used in lidar systems for  robots, surveillance systems, drones, autonomous cars, and vacuum cleaners.

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EPC Introduces 100 V eGaN Power Transistor for High Power Density Power Conversion and Lidar Applications

EPC Introduces 100 V eGaN Power Transistor for High Power Density Power Conversion and Lidar Applications

The EPC2070 offers power systems designers a 100 V, 23 mΩ, power transistor capable of 34 A pulsed in an extremely small chip-scale package.  These new devices are ideal for applications such as 60 W, 48 V power converters, Lidar, and LED lighting.

EL SEGUNDO, Calif. — December 2021 — Efficient Power Conversion (EPC) announces the EPC2070, a 100 V GaN transistor with a maximum RDS(on) of 23 mΩ and a 34 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.

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LiDAR System Design of ToF Laser Driver with GaN

LiDAR System Design of ToF Laser Driver with GaN

The new gallium nitride (GaN) family aims to deliver time-of-flight (ToF) applications for autonomous cars and 3D sensing across the consumer and industrial sectors. In an interview with EE Times, Alex Lidow, CEO at EPC, highlighted how introducing the eToF Laser Driver family’s for LiDAR system design at a low cost competes with the Mosfet when it comes to LiDAR applications.

EEWeb
September, 2021
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Efficient Power Conversion (EPC) Expands eToF Laser Driver IC Family of Products with Device Optimized for Augmented Reality

Efficient Power Conversion (EPC) Expands eToF Laser Driver IC Family of Products with Device Optimized for Augmented Reality

Efficient Power Conversion (EPC) announces the expansion of its new gallium nitride (GaN) integrated circuit (IC) product family offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, gaming, and autonomous cars.

EL SEGUNDO, Calif.— March 2021 — EPC announces the introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and low-voltage differential signaling (LVDS) logic level input in a single chip for time-of-flight lidar systems used in robotics, drones, augmented reality, and gaming applications.

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Efficient Power Conversion (EPC) Revolutionizes Lidar System Design with Release of eToF Laser Driver IC Family of Products

Efficient Power Conversion (EPC) Revolutionizes Lidar System Design with Release of eToF Laser Driver IC Family of Products

Efficient Power Conversion (EPC) introduces the first of a new gallium nitride (GaN) integrated circuit (IC) product family offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, and autonomous cars.

EL SEGUNDO, Calif.— February 2021 — EPC announces the introduction of a laser driver that integrates a 40 V, 10 A FET with integrated gate driver and 3.3 logic level input in a single chip for time-of-flight lidar systems used in robotics, surveillance systems, drones, autonomous cars, and vacuum cleaners.

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25 Autonomous Vehicles Influencers to Follow by 2020

25 Autonomous Vehicles Influencers to Follow by 2020

The ultimate aim of Artificial Intelligence is to provide machines the ability to operate autonomously. One such area which is projected to grow exponentially over the next decade is Autonomous Vehicles. With Artificial Intelligence coupled with the rapid advances in electronics and computer technology, the word driverless will soon take over the roads.

AI Time Journal
October, 2020
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EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V eGaN FET Family

EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V eGaN FET Family

These new generation 100 V eGaN® FETs are ideal for 48-VOUT synchronous rectification, class-D audio, infotainment, and lidar.

EL SEGUNDO, Calif.— September, 2020 — EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of EPC2218 and EPC2204 100 V eGaN FETs.  The applications for these leading-edge devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones.

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EPC to Showcase High Power Density eGaN FETs and ePower Stage IC in Customer Applications at PCIM Europe 2020 Digital Days

EPC to Showcase High Power Density eGaN FETs and ePower Stage IC in Customer Applications at PCIM Europe 2020 Digital Days

Efficient Power Conversion (EPC) will showcase the company’s latest ePower™ Stage IC family of products showing how GaN technology’s superior performance is transforming power delivery for computing, communications, robotics, and transportation at the PCIM Europe 2020 Digital Days.

EL SEGUNDO, Calif.— June 2020 — The EPC team will be delivering three technical presentations and participating in two panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2020 Digital Days, July 7 – 8. In addition, the company will participate in the event’s virtual exhibit, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN technology.

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Go-ahead for GaN

Go-ahead for GaN

It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow. There are many reasons to use GaN-on-Si power transistors such as eGaN FETs, in telecoms, vehicles, healthcare and computing. Smaller, faster, lower cost, and more integrated, GaN-on-Si devices have spent a decade gaining the confidence and trust of designers across the spectrum of power conversion applications.

Electronic Specifier
November 20, 2019
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EPC: Ahead of the Pack

EPC: Ahead of the Pack

EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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Designing LiDAR and more into Autonomous E racing

Designing LiDAR and more into Autonomous E racing

The reason eGaN FETs (and now ICs) are used in all the LiDAR systems for autonomous cars, and now autonomous race cars, is that they enable much higher resolution (due to extremely short laser pulses), faster image speed (due to short laser pulses), and the ability to see greater distances with high accuracy (due to fast laser pulses at very high current).

Planet Analog
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Why experts believe cheaper, better lidar is right around the corner

Why experts believe cheaper, better lidar is right around the corner

This article takes a deep dive into lidar technology. It explains how the technology works and the challenges technologists face as they try to build lidar sensors that meet the demanding requirements for commercial self-driving cars.

The bottom line is that while bringing lidar costs down will take a significant amount of difficult engineering work, there don't seem to be any fundamental barriers to bringing the cost of high-quality lidar down below $1,000—and eventually below $100. That means the technology—and ultimately, self-driving vehicles that depend on lidar—should be well within reach for ordinary consumers.

Ars Techinca
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Efficient Power Conversion Corporation’s (EPC) eGaN Transistor Wins 2017 Impact Award from Electronics Component News Magazine

Efficient Power Conversion Corporation’s (EPC) eGaN Transistor Wins 2017 Impact Award from Electronics Component News Magazine

EPC2040, an eGaN® power transistor optimized for LiDAR applications, placed first in the Passive Components & Discrete Semiconductors category of ECN magazine’s prestigious 2017 Impact Award.

EL SEGUNDO, Calif — November  2017 Efficient Power Conversion Corporation’s (EPC) is proud to announce that Electronic Component News (ECN) — a leading trade publication for electronic design engineers — has awarded the EPC2040, enhancement mode gallium nitride (eGaN) transistor its ECN Impact Award for 2017 in the Passive Components and Discrete Semiconductors category.

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How GaN Power Transistors Drive High-Performance Lidar: Generating ultrafast pulsed power with GaN FETs

How GaN Power Transistors Drive High-Performance Lidar: Generating ultrafast pulsed power with GaN FETs

Light detection and ranging (lidar) is a versatile light-based remote sensing technology that recently has been the subject of great attention. It has shown up in a number of media venues and has even led to public debate about the engineering choices of a well-known electric car company, Tesla Motors. While this article is not going to enter the fray, it will provide some background on lidar and discuss its strong connection to power electronics technologies.

Published in: IEEE Power Electronics Magazine ( Volume: 4, Issue: 1, March 2017 )
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The Tech Blog Writer Podcast 180: Why Gallium Nitride Is About to Disrupt Silicon

The Tech Blog Writer Podcast 180: Why Gallium Nitride Is About to Disrupt Silicon

At the CES show in Las Vegas this year, EPC (Efficient Power Conversion) showcased how GaN is a core technology behind autonomous vehicles, the house of the future without power cords, the connected car, and non-invasive colonoscopies with an x-ray system within a pill. Replacing silicon, one of the most prevalent types of semiconductor around, with a different material, Gallium Nitride, commonly abbreviated as GaN — or “eGaN,” EPCS new, improved form of GaN. Silicon enabled Intel to build an entire empire, but could this be displaced by GaN? This is an episode that you can expect to learn a huge amount and how it appears that the days of Silicon are numbered in this digital age where companies must disrupt or face disruption. Anyone interested in technology and where the industry is heading will love this episode. Guest Info Dr. Alex Lidow the CEO and co-founder of Efficient Power Conversion onto the show to learn What is GaN? Why GaN? and where is it heading?

Listen to Interview
The Tech Blog Writer Podcast
January 20, 2017

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