EPC9017 - Development Board

EPC Development Board

VDS(max), 100 V
ID(max RMS), 20 A
Half Bridge Plus Driver

The EPC9017 development board features the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 20 A maximum output current in a half bridge configuration with onboard gate drives. The purpose of this development board is to simplify the evaluation process of the EPC2001 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

Status: Obsolete
The GaN Experts recommend EPC9097 for new designs
Ask and EPC Engineer a Question FAQ

Have a design question?
Ask a GaN Expert