EPC2378: 25 V, 101 A, 0.37mΩ GaN Power Transistor

VDS, 25 V
Typ RDS(on), 0.37 mΩ
ID, 101 A
Pulsed ID, 699 A

EPC2373 Enhancement Mode GaN Power Transistor
Package Size: 3.3 mm x 3.3 mm

Applications

  • High-performance, high power-density DC-DC conversion
  • High-frequency DC-DC converters
  • Synchronous rectifiers
  • Point-of-Load (POL) buck converters
  • Secondary-side power stages in 48V-to-8V/5V LLC converters

Benefits

  • Ultra-low QG for high-frequency operation
  • Industry-leading low RDS(on) × QG figure of merit
  • PQFN package with backside thermal pad
  • Optimized for synchronous rectification
Status: Preferred
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.
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