EPC1010 - Enhancement Mode Power Transistor

VDS, 200 V
RDS(on), 25 mΩ
ID, 12 A

EPC1010 Enhancement Mode GaN Power Transistor
Die Size: 3.6 mm x 1.6 mm

Applications

  • High Speed DC-DC Conversion
  • Hard Switched and High Frequency Circuits
  • Class D Audio

Benefits

  • Ultra High Efficiency
  • Ultra Low RDS(on)
  • Ultra Low QG
  • Ultra small footprint
Status: Obsolete
Use EPC2010 for new designs
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