EPC2204: 100 V, 125 A Enhancement-Mode GaN Power Transistor

V_DS, 100 V
R_DS(on), 6 mΩ
I_D, 29 A
Pulsed I_D, 167 A

Die Size: 2.5 mm x 1.5 mm

Higher Switching Frequency – Lower switching losses and lower drive power
Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint - Higher power density

Status: Preferred

Start your design today with these low cost evaluation options:

100 V, 20 A half-bridge evaluation

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