EPC2207: 200 V, 54 A Enhancement-Mode GaN Power Transistor

V_DS, 200 V
R_DS(on), 22 mΩ
I_D, 14 A
Pulsed I_D, 54 A

Die Size: 2.8 mm x 0.9 mm

Higher Switching Frequency – Lower switching losses and lower drive power
Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint - Higher power density

Status: Preferred

Start your design today with these low cost evaluation options:

EPC90124	200 V, 8 A half-bridge evaluation	$118.75
EPC9083	60 W differential mode class-E wireless power amplifier	$158.12

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