EPC2212: Automotive 100 V, 75 A Enhancement-Mode GaN Power Transistor

V_DS, 100 V
Max R_DS(on), 13.5 mΩ
I_D, 18 A
Pulsed I_D, 75 A
AEC-Q101 Qualified

EPC2212 Enhancement Mode GaN Power Transistor

Die Size: 2.1 mm x 1.6 mm

Applications

DC-DC Converters
Isolated DC-DC Converters
BLDC Motor Drives
Sync rectification for AC-DC & DC-DC
LiDAR/Pulsed Power Applications
48 V Power Distribution Systems
High-Fidelity Infotainment
High-Intensity Headlamps

Benefits

Higher Switching Frequency – Lower switching losses and lower drive power
Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint - Higher power density

Status: New Device Offered (NDO)
The GaN Experts recommend EPC2252 for new designsNDO Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.