EPC2212 - Automotive 100 V, 75 A Enhancement-Mode GaN Power Transistor

VDS, 100 V
Max RDS(on), 13.5 mΩ
ID, 18 A
Pulsed ID, 75 A
AEC-Q101 Qualified

EPC2212 Enhancement Mode GaN Power Transistor
Die Size: 2.1 mm x 1.6 mm

Applications

  • DC-DC Converters
  • Isolated DC-DC Converters
  • BLDC Motor Drives
  • Sync rectification for AC-DC & DC-DC
  • LiDAR/Pulsed Power Applications
  • 48 V Power Distribution Systems
  • High-Fidelity Infotainment
  • High-Intensity Headlamps

Benefits

  • Higher Switching Frequency – Lower switching losses and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Not Recommended for New Designs (NRND)
The GaN Experts recommend EPC2252 for new designsNRND Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.
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Start your design today with these low cost evaluation options:

EPC9126 100 V, 75 A pulsed laser diode driver $181.25

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