EPC2215: 200 V, 162 A Enhancement-Mode GaN Power Transistor

V_DS, 200 V
R_DS(on), 8 mΩ
I_D, 32 A
Pulsed I_D, 162 A

Die Size: 4.6 mm x 1.6 mm

Higher Switching Frequency – Lower switching losses and lower drive power
Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint - Higher power density

Status: Preferred

Start your design today with these low cost evaluation options:

200 V, 15 A half-bridge evaluation

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