EPC2252: Automotive 80 V, 75 A Enhancement-Mode GaN Power Transistor

V_DS, 80 V
Max R_DS(on), 11 mΩ
I_D, 8.2 A
Pulsed I_D, 75 A
AEC-Q101 Qualified

Die Size: 1.5 mm x 1.5 mm

Higher Switching Frequency – Lower switching losses and lower drive power
Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
Ultra-Small Footprint - Higher power density

Status: Preferred

Start your design today with these low cost evaluation options:

80 V, 5 A half-bridge evaluation

*Development Board for commercial device EPC2052 can be used for initial evaluation

Design Resources

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