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Dr. Yuanzhe Zhang Joins Efficient Power Conversion (EPC) as Director, Applications Engineering

Dr. Yuanzhe Zhang Joins Efficient Power Conversion (EPC) as Director, Applications Engineering

Dr. Zhang will be creating benchmark envelope tracking designs and assisting customers in the use of eGaN® FETs for high frequency, high- performance power conversion systems.

EL SEGUNDO, Calif.—January 2016 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. Yuanzhe Zhang has joined the EPC engineering team as Director, Applications Engineering.

As a member of the EPC applications team, Dr. Zhang’s focus will be designing state-of-the-art envelope tracking systems for 4G, LTE and 5G wireless infrastructure that demonstrate the benefits of using gallium nitride transistors. Dr. Zhang’s research and experience in these applications will be shared with customers to accelerate their designs using high performance eGaN FETs. His designs will demonstrate GaN transistors’ superior performance over MOSFETs and LDMOS.

“This is part of our continuous efforts of focusing on customer partnership in designing eGaN technology-based solutions. With our increased team resources, we are supporting the innovative developments of each customer using gallium nitride technology, We are very pleased to have Dr. Yuanzhe Zhang joining us at the time when we are moving full-speed ahead in fast growing applications such as envelope tracking for telecom infrastructure,” said Alex Lidow, CEO and co-founder of Efficient Power Conversion Corporation.

Dr. Zhang earned a doctorate in electrical engineering from the University of Colorado in Boulder, and earned his bachelor’s degree at Zhejiang University in Hangzhou, China. While working on his Ph.D. he published several papers on the use of GaN transistors in very-high-frequency DC-DC converters and envelope tracking power supplies for telecom infrastructure.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]