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Efficient Power Conversion Corporation’s (EPC) eGaN Transistor Wins 2017 Impact Award from Electronics Component News Magazine

Efficient Power Conversion Corporation’s (EPC) eGaN Transistor Wins 2017 Impact Award from Electronics Component News Magazine

EPC2040, an eGaN® power transistor optimized for LiDAR applications, placed first in the Passive Components & Discrete Semiconductors category of ECN magazine’s prestigious 2017 Impact Award.

EL SEGUNDO, Calif — November  2017 Efficient Power Conversion Corporation’s (EPC) is proud to announce that Electronic Component News (ECN) — a leading trade publication for electronic design engineers — has awarded the EPC2040, enhancement mode gallium nitride (eGaN) transistor its ECN Impact Award for 2017 in the Passive Components and Discrete Semiconductors category.

The 15 V, 30 mΩ EPC2040 eGaN FET was recognized for its extremely fast and consistent switching, which enables greater resolution and accuracy in applications dependent upon pulsed laser drivers,  which include LiDAR systems used for guidance in autonomous vehicles and augmented reality systems.  In addition, the EPC2040 can be used in high-speed point-of-load conversion applications to reduce the size, height, and weight of next generation mobile computing systems.

“We are honored that ECN magazine has selected the EPC2040 eGaN power transistor for this prestigious industry award.  The Impact Award substantiates that gallium nitride technology continues to emerge as the performance leader in power conversion technology.  Enabling applications such as LiDAR for self-driving vehicles and DC-DC conversion is proof that eGaN technology will lead the way for continued increases in performance in power transistors.” said Alex Lidow, EPC’s co-founder and Chief Executive Officer.

Pricing for the EPC2040 power transistors at 1K units is $0.71 each and are immediately available through Digi-Key Corporation.

About EPC

EPC is the leader in enhancement-mode gallium nitride based power management technology. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote imaging and sensing technology (LiDAR), and Class-D audio amplifiers with device performance man