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EPC Joining PCIM Asia 2018 for Knowledge Exchange with Power Management Design Engineers on Wireless Power and Light Distancing and Ranging (LiDAR) Applications

EPC Joining PCIM Asia 2018 for Knowledge Exchange with Power Management Design Engineers on Wireless Power and Light Distancing and Ranging (LiDAR) Applications

EL SEGUNDO, Calif. — June 22, 2018 -- Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, will meet with design engineers in power management in Shanghai, China, for knowledge exchanges on solutions using a synchronous FET Class E rectifier for over 30 W highly-resonant wireless power receivers, and a kilowatt laser driver with 120 A, sub-10 nanosecond pulses in < 3 cm2 using eGaN FET.

Meet EPC experts on power management at PCIM Asia Exhibition and Conference on June 26th, 2018 (Tuesday) at 10 a.m. – 10.50 a.m. at Exhibition Hall No. 2, 1/F of Shanghai World Expo Exhibition and Convention Center, 1099 Guozhan Road, Shanghai, China.

Dr. Michael de Rooij, Vice President of Application Engineering, EPC, will share onsite with engineers about a synchronous FET Class E rectifier for over 30 W highly-resonant wireless power receivers. This proposal shows a synchronous switch GaN FET in a class E topology outperforming a traditional full bridge Schottky diode.

Dr. John Glaser, Director, Application Engineering, EPC, will share onsite with engineers about a kilowatt laser driver with 120 A, sub-10 nanosecond pulses in < 3 cm2 using eGaN FET. A primary application for LiDAR is for navigation and obstacle avoidance in real-time Advanced Driver Assistance System (ADAS) and autonomous vehicle navigation. This presentation describes a laser driver using a single commercial GaN FET to achieve current pulses into a laser diode of >120 A peak for a peak laser input power of > 4 kW, with a duration < 10 ns. The area occupied by the driver and laser is < 3 cm2.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs and integrated circuits as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote imaging and sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle ([email protected]); Winnie Wong ([email protected])