Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates.
GaN-based design delivers 97% full-load efficiency for next-generation AI power
EL SEGUNDO, Calif. – June 1, 2026 – Efficient Power Conversion (EPC) has provided additional details on its EPC91123 evaluation board, an 800 VDC to 12.5 VDC, 6 kW isolated converter designed to support next-generation AI data center power architectures. As a contributor to the NVIDIA MGX™ AI Factory ecosystem, EPC contributes advanced GaN-based power conversion solutions designed to support emerging 800 VDC server architectures, enabling higher power density, improved efficiency, and scalable rack-level power delivery for next-generation AI infrastructure.
Read more
Powering the AI Factory: How EPC GaN Solutions Supercharge the NVIDIA MGX Architecture
The digital world is entering a new AI industrial revolution, with data centers transforming into AI factories that generate intelligence at massive scale. AI is no longer just a software story; it is rapidly becoming an infrastructure story as well. Modern workloads are shifting from simple human‑to‑AI interactions toward AI‑to‑AI collaboration, where agentic models coordinate tasks, reason autonomously, and work across extremely long token sequences. This puts new pressure on infrastructure: not only do systems need more raw compute, they must also meet strict requirements around latency, thermal management, and energy efficiency. To understand how AI factories are being built in practice, NVIDIA MGX™ provides the modular foundation for scalable and flexible accelerated computing infrastructure. While MGX addresses infrastructure modularity and faster deployment, a more serious bottleneck is brewing elsewhere: power delivery. The efficiency of power conversion is critical to maintain performance and efficiency as AI systems become more complex and denser. A key enabling technology is Efficient Power Conversion’s (EPC) gallium nitride (eGaN®) solutions, which offers the efficiency, power density, and thermal performance required for next-generation AI infrastructure.
Read more
By Maurizio Di Paolo Emilio
Satellite payload architectures are undergoing a transition from fixed-function processing chains toward flexible computing infrastructures capable of supporting dynamic workloads directly in orbit. This shift reflects a broader transformation in space systems engineering, where spacecraft are increasingly expected to perform signal processing, sensor fusion, anomaly detection, and artificial intelligence inference without relying exclusively on ground-based processing resources.
Read more
Mouser to Distribute EPC’s Latest GaN Devices for High-Efficiency Power Designs
EL SEGUNDO, Calif. – May 18, 2026 — Efficient Power Conversion (EPC), the world’s leader in enhancement-mode gallium nitride (eGaN®)-based power management solutions, offering GaN devices spanning 15 V to 350 V, today announced a global distribution agreement with Mouser Electronics, Inc., the authorized global distributor with the newest semiconductors and electronic components. This new partnership will see Mouser Electronics distribute EPC’s complete portfolio of eGaN® FETS and ICs.
Read more
Experts from EPC and Texas Instruments explain why GaN dominates humanoid robot motor drive design at the joint level.
A humanoid robot requires approximately 40 to 80 motors to drive its limbs and torso, with each hand containing more than a dozen additional motors to replicate dexterous manipulation. The high density of independent actuators creates a complex power-electronics integration challenge that must be packaged within human-dimensional constraints.
Read more
Compact motor drives and converters enable humanoids, drones and battery-powered tools. High power density DCDC converters from 800 V to point-of-load use EPC’s latest-generation GaN devices.
EL SEGUNDO, Calif. - May 13, 2026 — Efficient Power Conversion (EPC), the world’s leader in enhancement-mode gallium nitride (GaN)–based power solutions, will showcase the company’s newest generation GaN technology for humanoid robotics, drones and compact electrified motion systems at PCIM Europe 2026, taking place June 9-11, 2026 in Nuremberg, Germany, Hall 9, Stand 304. At the show, EPC will demonstrate how its Gen 7 GaN platform enables compact, production-ready power architectures for next generation intelligent motion systems and AI power delivery. These devices offer higher switching frequency, lower losses and tighter layouts - improving efficiency and integration in robotic motion control.
Read more
At Efficient Power Conversion, we’re pioneering new frontiers in power electronics with eGaN technology that allows for smaller, faster, more efficient systems. From robotics and drones to AI and Space, EPC helps engineers simplify design and bring next-generation innovations to life.
Read more
By Marco Palma, Director, Motor Drives Systems and Applications, and Maurizio Di Paolo Emilio, Marcom Director, Efficient Power Conversion (EPC)
Gallium nitride (GaN) power devices are enabling a new generation of high-efficiency, high-power-density motor drive systems. Compared with conventional silicon MOSFETs, GaN transistors offer significantly lower gate charge, reduced output capacitance, and very low on-resistance, allowing power converters to operate at much higher switching speeds. As a result, motor inverters based on GaN technology can achieve switching frequencies well above 100 kHz while reducing both conduction and switching losses. These characteristics enable smaller passive components, improved efficiency, and more compact system designs.
Bodo’s Power Systems – May Issue
Read More…
Read more
Compared to existing silicon MOSFETs, GaN offers faster switching speeds and higher efficiency. Demand is rapidly increasing across a wide range of applications, including AI server power supplies, adapters, UPS systems, and EV chargers. In particular, in 48V-based power architectures, applying GaN can reduce power losses by more than 20%, making it a key technology in data centers and high-performance computing environments. Amid these trends, the power semiconductor market is expected to be reorganized around GaN, and the existing MOSFET and driver IC markets - currently worth over $20 billion - are also undergoing rapid changes. Companies like EPC are accelerating the transition to GaN ICs, while continuous technological advancements are driving improvements in system efficiency, size reduction, and reliability. In Korea as well, demand for GaN solutions is steadily increasing, particularly in applications such as EVs, renewable energy, and battery systems. GaN is gaining attention as a core technology that enhances power efficiency while enabling more compact and lightweight designs.
Read more
As AI infrastructure migrates to 800 V distribution and humanoid robots embed power electronics directly within joints, Generation 7 GaN and integrated GaN ICs are enabling higher efficiency, faster switching and dramatically improved power density in the critical 15 V to 40 V range — reshaping how hardware development teams approach next-generation conversion architectures.
As artificial intelligence infrastructure scales toward megawatt-class racks and 800 V distribution architectures, and humanoid robotics pushes power electronics directly into joints and actuators, the demands placed on conversion efficiency, density and dynamic performance have fundamentally shifted. Traditional silicon MOSFET-based designs are increasingly constrained by switching losses, thermal limits and physical footprint — particularly in the 15 V to 40 V range that underpins motor drives, point-of-load converters and distributed robotics power stages.
Read more
By Maurizio Di Paolo Emilio, Marcom Director, EPC – Efficient Power Conversion
The design requirements for motor drive electronics are being significantly altered by the continuous shift from conventional automation to mobile robotics. Volume, mass, efficiency, acoustic emission, and dynamic response are all simultaneously constrained by actuators integrated into wearable technology, humanoid robots, and aerial platforms. In these applications, the inverter becomes a tightly coupled component of the electromechanical structure rather than a peripheral power stage.
Read more
In this video from APEC, Alejandro Pozo, Director of Applications Engineering at EPC, presents the company’s latest low-voltage eGaN FET solutions for high-current buck converters. He walks through several evaluation boards featuring 40 V, 25 V, and 15 V devices delivering up to 50 A with impressive efficiency and very low thermal rise, even without heatsinks. Alejandro also highlights the compact EPC90175 half-bridge board and its integration with standard controllers and measurement hardware used for accurate testing in demanding applications..
Read more
EPC9186HC2 and EPC9186HC3 evaluation platforms enable high-current BLDC control up to 150 Arms using EPC2361 eGaN® FET technology
EL SEGUNDO, Calif. – April 14, 2026 – Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices, today introduced the EPC9186HC2 and EPC9186HC3 evaluation boards, two high-performance 3-phase BLDC motor drive inverter platforms designed for applications including robotics, industrial automation, light electric vehicles, electric scooters, forklifts, agricultural machinery, battery-powered mobility systems, and high-power drones. Supporting motor drive systems up to 5 kW, the boards enable engineers to evaluate compact, high-efficiency inverter architectures based on 100 V EPC2361 eGaN® FET technology.
Read more
Humanoid robotics is changing what motor drive electronics must do. In traditional industrial drives, the inverter is usually placed in an outside cabinet, connected to the motor by cables. However, in humanoid robots, actuators must fit into joints that replicate how people move like the shoulder, elbow, wrist, and even fingers. This architectural shift forces power electronics to migrate inside the motor housing, where space, thermal dissipation and dynamic response requirements are significantly more challenging.
Read more
In this video from APEC, Marco Palma, Director, Motor Drives Systems and Applications at EPC, presents advanced motor drive reference designs based on gallium nitride (GaN) technology. He first highlights the EPC91122 reference design, featuring the EPC33110 three-phase power module used to drive a mid-size drone motor and a high-torque humanoid robot joint. He then introduces the EPC91121, a highly integrated board for power tools, built on EPC’s latest Gen 7, 40 V GaN devices. Both platforms showcase compact form factor, high efficiency, and easy scalability from 250 W up to 5 kW for rapid prototyping.
Read more
Over the last few years, there has been phenomenal growth in the adoption of wide-bandgap semiconductors, in what seems to be a consolidated trend toward replacing legacy silicon products. Whereas silicon carbide has successfully targeted electric vehicles and charging infrastructure, gallium nitride (GaN) HEMTs have initially made inroads into consumer-oriented applications, primarily chargers and adaptors. Yet GaN is much more versatile than a simple MOSFET replacement for making chargers slimmer and lighter would suggest.
Read more
In this webinar, Michael De Rooij, GaN Application Fellow at Efficient Power Conversion (EPC), presents a high-performance 800 V (±400 V) to 12.5 V isolated converter for next-generation server power systems. He explains the cascade input (input-series, output-parallel) architecture using eight interleaved modules, combining a half-bridge primary with a push-pull secondary to cut ripple current, minimize capacitance, and improve thermal distribution. The speaker details the use of low-voltage GaN FETs, the isolation and gate-drive scheme, and measured efficiency above 98%. He concludes by introducing a new 800 V to 50 V, multi-kilowatt, 1 MHz design that doubles power density.
Read more
Marco Palma, Director, Motor Drives Systems and Applications at Efficient Power Conversion (EPC), presents how gallium nitride (GaN) inverters are transforming motor control in humanoid robots. In this talk, he explains how fast-switching GaN devices with zero reverse recovery enable higher PWM frequencies, reduced dead times, and the elimination or reduction of electrolytic capacitors. The result is higher efficiency, higher torque per ampere, smaller form factors, and smoother joint operation. Palma details EPC’s reference designs for various humanoid joints - from arms and wrists to hips - covering integrated three-phase modules and high-current discrete solutions that scale from a few hundred watts to several kilowatts.
Read more
In this video, Microchip and EPC showcase their latest advancements in high-efficiency power conversion for next-generation data centers and AI servers. Andreas Reiter, Senior Technical Applications Engineer of dsPIC at Microchip and Michael De Rooij, GaN Applications Fellow, EPC present a 5 kW multi-level flying-capacitor PFC and an ultra-compact 800 V-to-12 V, 6 kW ISOP converter. They explain how low-voltage GaN devices, advanced DSP-based digital control, and sophisticated LLC startup sequencing enable dramatic size, loss, and EMI reductions. If you’re designing high-density server power supplies or exploring cutting-edge digital power architectures, this deep-dive will give you practical insights and concrete implementation ideas.
Read more
This presentation by Shengke Zhang, VP Reliability at EPC, addresses one of the most common questions in GaN power device reliability: how manufacturers can confidently guarantee a 10-year lifetime without waiting a decade to verify it. The talk introduces the reliability “bathtub curve,” explains the limits of standard 1,000-hour qualification testing, and presents the test-to-fail approach used to predict long-term wear-out behavior. Through a case study on 48 V intermediate bus converter (IBC) modules for data centers, Zhang highlights the impact of temperature cycling, failure-mechanism analysis, and physics-based lifetime modeling to ensure robust GaN performance in demanding high-power-density applications.
Read more