The EPC91104 provides a versatile reference design, with optimized PCB layout, for wide input voltage range motor drive applications

EL SEGUNDO, Calif.— January 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices announces the launch of the EPC91104, a high-performance 3-phase BLDC motor drive inverter reference design. This innovative design is ideal for powering compact, precision motors in humanoid robots, such as those used for wrist, finger, and toe movements.

The EPC91200 provides a versatile reference design, with optimized PCB layout, for wide input voltage range motor drive applications

EL SEGUNDO, Calif.— January 2025 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices introduces the EPC91200, a fully configured motor drive inverter reference design that delivers exceptional performance and flexibility for a variety of industrial and battery-powered applications.

ITC import and sales ban on Innoscience products now in effect

El Segundo, CA – January 7, 2025 – Efficient Power Conversion (EPC) today announced the conclusion of the Presidential review period for the U.S. International Trade Commission’s (ITC) final determination, affirming that Innoscience (Zhuhai) Technology Co., Ltd. and its affiliates (Innoscience) infringed EPC’s foundational patent for GaN technology. The ITC’s decision is now final, implementing an import and sales ban on Innoscience products in the United States without a license from EPC.

Andover, Massachusetts and El Segundo California – December 2024 – EPC Space, a leader in radiation-hardened (Rad Hard) GaN-on-silicon transistors and ICs, is pleased to announce that both its Andover, Massachusetts facility and its wafer fabrication facility in Taiwan have been certified under the JANS MIL-PRF-19500 standard.

This certification marks a significant milestone, highlighting EPC Space's commitment to excellence and its role as a leader in providing top-tier semiconductor solutions for critical space applications. The MIL-PRF-19500 certification, managed by the U.S. Department of Defense, sets the bar for reliability, performance, and environmental resilience in semiconductor components. EPC Space's achievement in obtaining this certification for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) is a world first.

Enhancing Photovoltaic System Performance with Compact, Reliable, Cost-Effective GaN Technology

EL SEGUNDO, Calif.— December, 2024 — Efficient Power Conversion Corporation (EPC), the world leader in enhancement-mode gallium nitride (eGaN^®) power devices, proudly announces the launch of the EPC9178, the latest reference design for photovoltaic (PV) optimizers. Designed to deliver high reliability while addressing critical challenges in energy efficiency and cost-effectiveness through the reduction of passive components in solar energy systems, the EPC9178 demonstrates the transformative potential of GaN technology for renewable energy solutions.

In this episode, EPC CEO Alex Lidow returns to the Spirit Electronics Behind the Screen podcast to talk about GaN’s growth in space, automotive, and AI.

Spirit Electronics
December 2024
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At electronica 2024, on the DigiKey booth, Caitlin Gittins spoke with Alex Lidow, CEO, EPC about GaN and the future of untethered robots. After introducing EPC and explaining the unique benefits of GaN compared to traditional silicon-based semiconductors, the conversation explores EPC’s specific GaN solutions and their applications in robotics. The discussion touches on the concept of humanoid robots, contrasting them with conventional robotic arms, and EPC’s outlook on robotics’ future. It examines how GaN is advancing the robotics industry by enhancing autonomy and efficiency and discuss EPC’s recommendations for developers adopting GaN in their designs. The conversation concludes with how EPC is positioning itself to meet the evolving demands of robotics and AI-driven humanoid robots.

Electronic Specifier
November, 2024
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Commission Orders Import and Sales Ban of Innoscience Products

El Segundo, CA – November 8, 2024 – Efficient Power Conversion (EPC) announced today that the Full Commission of the U.S. International Trade Commission (ITC) has affirmed the ITC’s initial determination that Innoscience infringed EPC’s foundational patent for GaN technology, which is core to applications involving artificial intelligence, satellites, rapid chargers, humanoid robots, and autonomous driving, among others. The decision imposes a ban on Innoscience (Zhuhai) Technology Co., Ltd. and its affiliates (Innoscience) from importing GaN-related products into the United States without a license from EPC.

The adoption of photovoltaic (PV) systems continues to grow, and the ever-present pressure on manufacturers drives innovation and the adoption of new technologies to reduce cost without compromising reliability. As renewable energy systems continue to evolve, the use of innovative technologies like GaN FETs will be key to driving further improvements in cost, performance, and reliability across the industry.

Bodo’s Power Systems
November 2024
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In this article we discuss an analysis of root cause failure mechanisms from drain and gate over-voltage stresses on p-GaN HEMT devices that are widely used in the industry. An exclusive interview with one of the authors of this study is presented in the conclusions.

Power Electronics News
October 2024
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The world is entering a new era of automation, where robots are becoming increasingly sophisticated, capable of performing tasks once considered the exclusive domain of humans. At the forefront of this transformation are humanoid robots, designed to mimic the form and functions of the human body.

Bodo’s Power Systems
October 2024
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EPC’s GaN Experts will be available during PCIM Asia, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications including AI servers, robotics, and more.

EL SEGUNDO, Calif. — August 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) FETs and ICs, is excited to announce its participation in PCIM Asia 2024. The event will take place from August 28-30 in Shenzhen, China. Attendees are invited to visti EPC at Hall 11, Stand F01 to explore the industry’s most comprehensive portfolio of GaN power conversion solutions.

EPC's portfolio of GaN-based power-conversion solutions, built to deliver high efficiency and reliability, were on display at PCIM Europe.

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Electronic Design
July, 2024

Agency’s Recommendation Validates EPC’s Proprietary GaN Technology Core to Powering Rapid Development of AI, Satellites, Humanoid Robots and Autonomous Driving

El Segundo, CA – July 8, 2024 – Efficient Power Conversion (EPC), a rapidly growing and innovative company, announced today that it has moved one step closer to achieving preeminence in the gallium nitride (GaN) power semiconductor industry, as its intellectual property rights to this revolutionary technology were upheld for the third time in three months. The next-generation wide bandgap semiconductors developed by EPC are essential to artificial intelligence (AI), satellites, fast chargers, lidar, humanoid robots and many other transformational technologies.

Video: Alex Lidow discusses the latest trends in power electronics showcased at the PCIM conference, the evolution of GaN technology, and its impact on sustainability and energy costs. He also shares insights on overcoming technological and regulatory hurdles and forecasts future innovations that will shape the power electronics market.

Power Electronics News
June, 2024
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Battery-powered applications such as new-generation robots, drones, and power tools require a reduction in space and a simplification of the design to control electric motors. Optimizing size and components results in innovative solutions that include more functions in a small space without losing efficiency and performance. EPC ePower™ Stage ICs technology helps to simplify and improve the inverter design in advanced motor control applications.

Bodo’s Power Systems
June, 2024
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The first Universal Serial Bus (USB) specification, released in 1996, aimed to standardize power delivery and connectivity in computing and telecommunication industries [1]. Initially supporting a 5 V power bus with up to 5 A of current (25 W) and maximum data transfer rates of 12 Mbit/s, USB has evolved significantly due to the proliferation of electronic devices, leading to a demand for higher power capabilities.

Bodo’s Power Systems
May, 2024
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EPC introduces the 50 V, 8.5 mOhm EPC2057 GaN FET in tiny 1.5 mm x 1.2 mm footprint, offering higher power density for USB-C PD applications.

EL SEGUNDO, Calif.— June 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 50 V, 8.5 mΩ EPC2057. This GaN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, and eMobility.

EPC’s GaN Experts will be available during PCIM Europe, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications.

EL SEGUNDO, Calif. — May 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) FETs and ICs, is proud to announce its participation in PCIM Europe, the international leading exhibition and conference for Power Electronics, Intelligent Motion, Renewable Energy, and Energy Management. The event, held from 11 June to 13 June in Nuremburg, Germany, brings together industry experts and thought leaders to explore the latest advancements in power electronics and motion control.

El Segundo, CA – May 6, 2024 – Efficient Power Conversion Corp (“EPC”) announced today that the China National Intellectual Property Administration (“CNIPA”) has validated the claims of EPC patent titled “Compensated gate MISFET and method for fabricating the same” (Chinese Patent No. ZL201080015425.X) for enhancement-mode GaN semiconductor devices.

The decision on April 30, 2024 follows an April 2, 2024 announcement from the CNIPA that confirmed the validity of key claims of EPC’s Chinese patent titled “Enhancement mode GaN HEMT device and method for fabricating the same” (Chinese Patent No. ZL201080015388.2). Both EPC patents were challenged by Innoscience (Suzhou) Technology Co., Ltd. (“Innoscience”).