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As servers move to 48V, GaN transistors will beat today's silicon MOSFETs, leading to better performance and cost.
Data Center Dynamics
March, 2022
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Automotive 48 V/12 V converters are essential in modern hybrid electric vehicles, as the energy is exchanged between the 48 V and 12 V buses. This two-voltage system accommodates legacy 12 V systems and provides higher power for 48V to loads such as vacuum and water pumps, electric super chargers, steering, and audio systems. Among all the requirements for the 48 V/12 V converter, efficiency, power density, size and cost are on the top of the list. This article addresses these design criteria by employing the GaN ePower™ Stage, EPC23101, and compares it with a previous design using discrete EPC2206 devices.
Bodo’s Power Systems
March, 2022
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The EPC9167 GaN-based inverter reference design enhances motor system performance, range, precision, torque, all while lowering overall system cost. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.
Robotics Tomorrow
March, 2022
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In this article, the most common reasons for some customers to be slower in their embracing what is clearly a displacement technology for their older silicon-based power MOSFETs will be discussed. Without going into the detailed statistics, a list of reasons, in order of frequency is derived. This list is based upon the understanding that some applications will place higher emphasis than others on certain characteristics of GaN. Our discussion is limited to devices rated at less than 400 V, as that is the application focus for Efficient Power Conversion (EPC) FET and IC products.
Power Systems Design
March, 2022
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A bidirectional converter developed by gallium nitride specialist EPC in collaboration with MPS operates at an advertised peak efficiency of 97 percent.
EETimes
February, 2022
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A few simple thermal management guidelines can help conduct heat away from GaN FETs. Enhancement-mode gallium nitride (eGaN) FETs offer high power-density with ultra-fast switching and low on-resistance, all in a compact form factor. However, the power levels these high-performance devices provide can be limited by extreme heat-flux densities. If not managed properly, the generated heat can compromise reliability and performance. Fortunately, chip-scale packaging for eGaN FETs can be leveraged at the board-side and the backside (i.e., case) to better dissipate heat.
Power Electronics Tips
February, 2022
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This article presents the design and performance of an automotive buck/reverse-boost converter with GaN for efficient 48 V power distribution.
Electronics Today
December/January Edition
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Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful enabler for efficient electrification. The trend towards increasing electrification in the automotive industry enables car makers both to deliver new innovations to market cost-effectively and to meet increasingly stringent emissions legislation. Raising the vehicle’s main bus voltage to 48 V helps meet the demands of power-hungry
systems such as the start-stop motor/generator of a mild hybrid vehicle, as well as loads such as electric power steering, electric supercharging, and vacuum and water pumps.
Bodo’s Power Systems
December, 2021
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EPC has introduced a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23101 eGaN IC plus EPC2302 eGaN FET offers an ePower Chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.
Bodo’s Power Systems
February, 2022
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The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.
Power Electronics News
January, 2022
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In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues.
Energies Journal
October, 2021
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Today, the permanent magnet motor, also known as DC brushless motor (BLDC), is widely used and offers higher torque capability per cubic inch and higher dynamics when compared to other motors. So far, silicon-based power devices have been dominant in the inverter electronics, but today their performance is nearing their theoretical limits. There is an increasing need for higher power density. Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy these needs.
Power Systems Design
November, 2021
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As the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability of manufacturing in space, motors – including their drivers – will take on even more functions. Of equal importance will be the motor drivers selected to drive those motors efficiently and reliably.
Components in Electronics
October, 2021
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This month has been a busy one in the FET space. Here are a few FETs from EPC, UnitedSiC, and Intel that depart from traditional silicon transistors in interesting ways.
All About Circuits
October, 2021
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The design of an LLC resonant converter illustrates how eGaN FETs can shrink the physical size of modern supply circuitry.
Power Electronic Tips
October, 2021
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GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining ring-free output switching waveforms and clean current reconstruction signals either from leg shunts or from in-phase shunts.
EEPower
October, 2021
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The new gallium nitride (GaN) family aims to deliver time-of-flight (ToF) applications for autonomous cars and 3D sensing across the consumer and industrial sectors. In an interview with EE Times, Alex Lidow, CEO at EPC, highlighted how introducing the eToF Laser Driver family’s for LiDAR system design at a low cost competes with the Mosfet when it comes to LiDAR applications.
EEWeb
September, 2021
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Gallium nitride (GaN) power semiconductors allow for innovation in the harsh radiation environments of space applications.
Electronics Weekly
September, 2021
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Over the past decade computers, displays, smart phones and other consumer electronics systems have become thinner while also becoming more powerful. As a result, the market continues to increase its demand for thinner power supply solutions with greater power density. This article examines the feasibility of adopting various non-isolated dc-dc step-down topologies for an ultra-thin 48 V to 20 V rated to 250 W. It examines the pros and cons of various non-isolated topologies and how the topology impacts the choice of the power transistors and magnetics, specifically the inductors, as these two components account for the bulk of the losses in a converter. The article also undertakes a detailed analysis of the challenges to design thin inductors for these applications, including examining the factors that drive inductor losses, inductor size, and the design tradeoffs, including the impact on EMI. For this work, an ultrathin multilevel converter topology was selected, built, and tested. The experimental results obtained from this converter were used to further refine the operating setting and component selections that resulted in a peak efficiency exceeding 98%.
Michael de Rooij, EPC
Quentin Laidebeur, Würth Elektronik
IEEE Power Electronics Magazine
September, 2021
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With the continuous and fast-paced growth of data processing infrastructures, higher power levels that can be delivered in smallest areas are demanded.
Power Systems Design
September, 2021
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