EPC introduces the 40 V, 1.1 mΩ EPC2066 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — May 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN^®) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2066 (0.8 mΩ typical, 40 V) GaN FET. 

Easy Engineering interviewed EPC’s Director of Marketing, Renee Yawger, on the current state of GaN adoption and the future of GaN technology.

Easy Engineering
May, 2022
Read article

Sensitron introduces the SPG025N035P1B GaN half-bridge module using the 350 V EPC2050 eGaN^® FET from Efficient Power Conversion (EPC)

EL SEGUNDO, Calif.— May 2022, Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s 350 V, EPC2050 GaN FET, Sensitron was able to reduce the size of their solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction. The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.

EPC introduces the 100 V, 2.2 mΩ EPC2071 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — May 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN^®) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET. 

One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status quo. The more conservative voices tend to cite older information that, given the fast change of trajectory that occurs at a tipping point, can lead to poor decisions for new designs. In the world of GaN power devices the tipping point occurred in the past two years when the rate of new GaN-based designs started to double year-on-year, and the legacy MOSFET designs started to face critical supply shortages due to their finely tuned, but less flexible supply chains. GaN devices, on the other hand, have remained in stock at most major distributors due to their relatively new and flexible supply chains utilizing older silicon foundries, but affording these foundries a new and vibrant future. In this article we will address some of the common misconceptions still showing up in articles and at conferences, usually presented by advocates of the status quo.

Bodo’s Power Systems
May, 2022
Read article

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with a 200 V device that boasts an ultra-low on-resistance and a tiny footprint.

EL SEGUNDO, Calif.— April 2022 — EPC announces the introduction of the EPC7007 radiation-hardened GaN FET. The EPC7007, a 200 V, 25 mΩ, 80 A_Pulsed, rad-hard GaN FET in a small 5.76 mm² footprint. The EPC7007 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm²). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family.  Packaged versions will be available from EPC Space.

Users of GaN FETs and ICs now have a tool to determine the derating needed in an application and reduce voltage derating factors. EPC has developed a first principle physics-based model to explain RDS(on) rise in GaN transistors under hard switching conditions. This article provides demonstrations for two synchronous rectification application examples.

Electronic Specifier
May, 2022
Read article

EPC’s GaN Experts will be available during PCIM Europe 2022, exhibiting various demonstrations of how GaN technology’s superior performance is transforming the delivery of power across many industries, including computing, communications, and emobility.

EL SEGUNDO, Calif. — April 2022 — The EPC team will be delivering multiple technical presentations on gallium nitride (GaN) technology and applications at PCIM Europe 2022 in Nuremburg, 10 – 12 May (see detailed schedule below). In addition, the company will demonstrate its latest eGaN^® FETs and ICs in a large variety of customer end products in Hall 9, Stand 113.

In this video, Alex Lidow shares thoughts on his career, his family, his time at university, and his Ph.D. course, but also about energy trends, the shift to GaN that the power electronics ecosystem is ready to make, and the following weekend, with the finest wine!

Power Electronics News
April 22, 2022
View video

The EPC2050 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor. It has a drain-source voltage of over 350 V, a drain-source on-resistance of 55 milliohms, and a gate threshold voltage of 1.3 V.

everything PE
April, 2022
Read article

Efficient Power Conversion (EPC) introduces the latest addition to its family of automotive qualified transistors and integrated circuits offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, and autonomous cars.

EL SEGUNDO, Calif.— April 2022 — EPC announces the introduction of the EPC2221, a common source dual gallium nitride FET rated at 100 V, 58 mΩ, and 20 A pulsed current.  The EPC2221 can be used in lidar systems for  robots, surveillance systems, drones, autonomous cars, and vacuum cleaners.

This article presents a two-phase DC/DC GaN converter with 120 VDC input operating at 6.7 MHz. 120 VDC is a standard voltage level in the secondary power system at the International Space Station (ISS). Using GaN FET’s high power density and ultra-fast switching, Tell-i’s newly developed SDK board uses two phases to exceed normal switching speeds. Supporting a standard 120-V bus voltage, as used in systems like the ISS, the multi-phase configuration allows interleaving converters to achieve effective switching at 3 MHz, 5 MHz, and an outstanding 6.87 MHz. Optimal and compact layout is achieved with the use of four EPC2019 GaN transistors and two LMG1210 gate drivers for small gate drive and power loops.

Power Electronics News
April, 2022
Read article

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum R_DS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level converters, EV charging, solar power inverters, lidar, and LED lighting.

EL SEGUNDO, Calif.— April 2022 — EPC announces the production release of the EPC2050, a 350 V GaN transistor with a maximum R_DS(on) of 80 mΩ and a 26 A pulsed output current. The EPC2050 measures just 1.95 mm x 1.95 mm. This tiny size enables power solutions that occupy ten times less area than comparable silicon solutions.

The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are revolutionizing motor drive applications such as industrial drones, e-bikes, scooters, power tools.

Bodo’s Power Systems
April, 2022
Read article

The mainstream materials for wide-bandgap (WBG) semiconductor power components are silicon carbide (SiC) and gallium nitride (GaN). They become various power system applications' most-preferred devices today with the rising awareness of energy conservation and sustainability. This was the first time Tech Taipei 2022 Conference used WBG as its theme. Speakers from key players in the industry were invited from design, manufacturing and testing fields to share with over 400 participants at the conference their latest technology and application trends.

EE Times Taiwan
March 25, 2022
Read article

As servers move to 48V, GaN transistors will beat today's silicon MOSFETs, leading to better performance and cost.

Data Center Dynamics
March, 2022
Read article

The EPC9171 evaluation board converts 90 – 265 V universal AC input to a DC output voltage adjustable over a wide range of 15 V through 48 V. This reference design can supply 240 W maximum output power at 48 V output voltage and 5 A load current. 

EL SEGUNDO, Calif.— March, 2022 — EPC announces the availability of the EPC9171, a 90 V – 260 V universal AC input to 15 V – 48 V DC output power supply designed for USB PD3.1 ultra-fast chargers. This reference design can deliver 240 W maximum output power at 48 V output voltage and 5 A load

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments with a device that has the lowest on-resistance of any rad hard transistor currently available on the market.

EL SEGUNDO, Calif.— March 2021 — EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 A_Pulsed, rad-hard eGaN FET in a small 13.9 mm² footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm²). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family.  Packaged versions will be available from EPC Space.

EPC and Analog Devices introduce reference design using a new Analog controller fully optimized to drive EPC GaN FETs. The combination of the new Analog LTC7890 synchronous GaN buck controller with ultra-efficient eGaN^® FETs from EPC (Efficient Power Conversion) enables up to 2 MHz switching frequency for high power density and low-cost DC-DC Conversion.

EL SEGUNDO, Calif.—  March, 2022 — EPC announces the availability of the EPC9160, a dual output synchronous buck converter reference design board operating at 2 MHz switching frequency that converts an input voltage of 9 V to 24 V to a 3.3 V or 5 V output voltage and delivers up to 15 A continuous current for both outputs. Thanks to the high switching frequency the converter size is very small, only 23 mm x 22 mm for both outputs, and the inductor height is only 3 mm.

Automotive 48 V/12 V converters are essential in modern hybrid electric vehicles, as the energy is exchanged between the 48 V and 12 V buses. This two-voltage system accommodates legacy 12 V systems and provides higher power for 48V to loads such as vacuum and water pumps, electric super chargers, steering, and audio systems. Among all the requirements for the 48 V/12 V converter, efficiency, power density, size and cost are on the top of the list. This article addresses these design criteria by employing the GaN ePower™ Stage, EPC23101, and compares it with a previous design using discrete EPC2206 devices.

Bodo’s Power Systems
March, 2022
Read article