News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates.

Wine Down Friday with Alex Lidow

Wine Down Friday with Alex Lidow

In this video, Alex Lidow shares thoughts on his career, his family, his time at university, and his Ph.D. course, but also about energy trends, the shift to GaN that the power electronics ecosystem is ready to make, and the following weekend, with the finest wine!

Power Electronics News
April 22, 2022
View video

Read more

New AEC Qualified Lidar Integrated Circuit from Efficient Power Conversion

New AEC Qualified Lidar Integrated Circuit from Efficient Power Conversion

Efficient Power Conversion (EPC) introduces the latest addition to its family of automotive qualified transistors and integrated circuits offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, and autonomous cars.

EL SEGUNDO, Calif.— April 2022 — EPC announces the introduction of the EPC2221, a common source dual gallium nitride FET rated at 100 V, 58 mΩ, and 20 A pulsed current.  The EPC2221 can be used in lidar systems for  robots, surveillance systems, drones, autonomous cars, and vacuum cleaners.

Read more

Multi-phase MHZ Converter with GaN

Multi-phase MHZ Converter with GaN

This article presents a two-phase DC/DC GaN converter with 120 VDC input operating at 6.7 MHz. 120 VDC is a standard voltage level in the secondary power system at the International Space Station (ISS). Using GaN FET’s high power density and ultra-fast switching, Tell-i’s newly developed SDK board uses two phases to exceed normal switching speeds. Supporting a standard 120-V bus voltage, as used in systems like the ISS, the multi-phase configuration allows interleaving converters to achieve effective switching at 3 MHz, 5 MHz, and an outstanding 6.87 MHz. Optimal and compact layout is achieved with the use of four EPC2019 GaN transistors and two LMG1210 gate drivers for small gate drive and power loops.

Power Electronics News
April, 2022
Read article

Read more

EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

EPC Introduces 350 V Gallium Nitride (GaN) Power Transistor − 20 Times Smaller Than Comparable Silicon and Lower Cost

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum RDS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level converters, EV charging, solar power inverters, lidar, and LED lighting.

EL SEGUNDO, Calif.— April 2022 — EPC announces the production release of the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 80 mΩ and a 26 A pulsed output current. The EPC2050 measures just 1.95 mm x 1.95 mm. This tiny size enables power solutions that occupy ten times less area than comparable silicon solutions.

Read more

Wide-bandgap (WBG) Components Build a Green World that is Highly Efficient and Saving Energy

Wide-bandgap (WBG) Components Build a Green World that is Highly Efficient and Saving Energy

The mainstream materials for wide-bandgap (WBG) semiconductor power components are silicon carbide (SiC) and gallium nitride (GaN). They become various power system applications' most-preferred devices today with the rising awareness of energy conservation and sustainability. This was the first time Tech Taipei 2022 Conference used WBG as its theme. Speakers from key players in the industry were invited from design, manufacturing and testing fields to share with over 400 participants at the conference their latest technology and application trends.

EE Times Taiwan
March 25, 2022
Read article

Read more

Benchmark Power Density Achieved Using “All-GaN” Design for Universal Input USB PD3.1 Ultra-Fast Charger Reference Design Delivering 240 W

Benchmark Power Density Achieved Using “All-GaN” Design for Universal Input USB PD3.1 Ultra-Fast Charger Reference Design Delivering 240 W

The EPC9171 evaluation board converts 90 – 265 V universal AC input to a DC output voltage adjustable over a wide range of 15 V through 48 V. This reference design can supply 240 W maximum output power at 48 V output voltage and 5 A load current. 

EL SEGUNDO, Calif.— March, 2022 — EPC announces the availability of the EPC9171, a 90 V – 260 V universal AC input to 15 V – 48 V DC output power supply designed for USB PD3.1 ultra-fast chargers. This reference design can deliver 240 W maximum output power at 48 V output voltage and 5 A load

Read more

Efficient Power Conversion (EPC) Releases Lowest On-Resistance Rad Hard Transistor Available on the Market for Demanding Space Applications

Efficient Power Conversion (EPC) Releases Lowest On-Resistance Rad Hard Transistor Available on the Market for Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments with a device that has the lowest on-resistance of any rad hard transistor currently available on the market.

EL SEGUNDO, Calif.— March 2021 — EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 APulsed, rad-hard eGaN FET in a small 13.9 mm2 footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family.  Packaged versions will be available from EPC Space.

Read more

EPC and Analog Devices Collaborate to Deliver up to 2 MHz Switching Frequency for the Highest Density DC-DC Converters Using GaN FETs

EPC and Analog Devices Collaborate to Deliver up to 2 MHz Switching Frequency for the Highest Density DC-DC Converters Using GaN FETs

EPC and Analog Devices introduce reference design using a new Analog controller fully optimized to drive EPC GaN FETs. The combination of the new Analog LTC7890 synchronous GaN buck controller with ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enables up to 2 MHz switching frequency for high power density and low-cost DC-DC Conversion.

EL SEGUNDO, Calif.—  March, 2022 — EPC announces the availability of the EPC9160, a dual output synchronous buck converter reference design board operating at 2 MHz switching frequency that converts an input voltage of 9 V to 24 V to a 3.3 V or 5 V output voltage and delivers up to 15 A continuous current for both outputs. Thanks to the high switching frequency the converter size is very small, only 23 mm x 22 mm for both outputs, and the inductor height is only 3 mm.

Read more

High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

Automotive 48 V/12 V converters are essential in modern hybrid electric vehicles, as the energy is exchanged between the 48 V and 12 V buses. This two-voltage system accommodates legacy 12 V systems and provides higher power for 48V to loads such as vacuum and water pumps, electric super chargers, steering, and audio systems. Among all the requirements for the 48 V/12 V converter, efficiency, power density, size and cost are on the top of the list. This article addresses these design criteria by employing the GaN ePower™ Stage, EPC23101, and compares it with a previous design using discrete EPC2206 devices.

Bodo’s Power Systems
March, 2022
Read article

Read more

Where is GaN Headed in 2022?

Where is GaN Headed in 2022?

Video Interview - Efficient Power Conversion’s CEO, Alex Lidow, talks with Electronic Design about the future of gallium nitride (GaN), the rate of GaN adoption and its use in power supplies and other technologies.

Electronic Design
March, 2022
View video

Read more

Roadblocks to GaN Adoption in Power Systems

Roadblocks to GaN Adoption in Power Systems

In this article, the most common reasons for some customers to be slower in their embracing what is clearly a displacement technology for their older silicon-based power MOSFETs will be discussed. Without going into the detailed statistics, a list of reasons, in order of frequency is derived. This list is based upon the understanding that some applications will place higher emphasis than others on certain characteristics of GaN. Our discussion is limited to devices rated at less than 400 V, as that is the application focus for Efficient Power Conversion (EPC) FET and IC products.

Power Systems Design
March, 2022
Read article

Read more

Efficient Power Conversion (EPC) to Showcase how GaN is Leading the 48 V Revolution Across Multiple Industries at APEC 2022

Efficient Power Conversion (EPC) to Showcase how GaN is Leading the 48 V Revolution Across Multiple Industries at APEC 2022

EPC’s GaN Experts will be available during APEC, exhibiting various demonstrations showcasing how GaN technology’s superior performance is transforming the delivery of power across many industries, including computing, communications, and emobility.

EL SEGUNDO, Calif. — March 2022 — The EPC team will be delivering multiple technical presentations, as well as a professional seminar on gallium nitride (GaN) technology and applications at the IEEE Applied Power Electronics Conference and Exposition (APEC 2022) in Houston from March 20th through the 24th (See detailed schedule below). In addition, the company will demonstrate its latest eGaN® FETs and ICs in a large variety of customer end products in booth #1307.

Read more

Premium Motor Drive Performance at Low Cost for e-bikes, Drones, and Robotics with GaN FETs from EPC

Premium Motor Drive Performance at Low Cost for e-bikes, Drones, and Robotics with GaN FETs from EPC

The EPC9167 GaN-based inverter reference design enhances motor system performance, range, precision, torque, all while lowering overall system cost. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— February, 2022 — EPC announces the availability of the EPC9167, a 3-phase BLDC motor drive inverter using the EPC2065 eGaN® FET. The EPC9167 operates from an input supply voltage between 14 V and 60 V (nominal 48 V) and has two configurations – a standard unit and a high current version:

Read more

Better thermal management of eGaN FETs

Better thermal management of eGaN FETs

A few simple thermal management guidelines can help conduct heat away from GaN FETs. Enhancement-mode gallium nitride (eGaN) FETs offer high power-density with ultra-fast switching and low on-resistance, all in a compact form factor. However, the power levels these high-performance devices provide can be limited by extreme heat-flux densities. If not managed properly, the generated heat can compromise reliability and performance. Fortunately, chip-scale packaging for eGaN FETs can be leveraged at the board-side and the backside (i.e., case) to better dissipate heat.

Power Electronics Tips
February, 2022
Read article

Read more

EPC Collaborates with MPS to Develop a 2 kW, 48 V/14 V, Regulated Output Voltage, DC-DC Reference Design Board with EPC latest GaN FETs for More Efficient, Smaller, Faster, Bidirectional Converters

EPC Collaborates with MPS to Develop a 2 kW, 48 V/14 V, Regulated Output Voltage, DC-DC Reference Design Board with EPC latest GaN FETs for More Efficient, Smaller, Faster, Bidirectional Converters

The EPC9165 is a two-phase, regulated output voltage, 48 V – 14 V bidirectional converter that delivers 2 kW with 96.8% peak efficiency

EL SEGUNDO, Calif.— February 2022 — EPC announces the availability of the EPC9165, a 2 kW, two-phase 48 V – 14 V bidirectional converter that operates with 97 % peak efficiency in a small footprint. This solution is ideal for high-density and high-power 48V battery packs such as those required for eMobility and light mobility.

Read more
RSS
First2345791011Last