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Electrifying Power Hungry Loads

Electrifying Power Hungry Loads

This article presents the design and performance of an automotive buck/reverse-boost converter with GaN for efficient 48 V power distribution.

Electronics Today
December/January Edition
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Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful enabler for efficient electrification. The trend towards increasing electrification in the automotive industry enables car makers both to deliver new innovations to market cost-effectively and to meet increasingly stringent emissions legislation. Raising the vehicle’s main bus voltage to 48 V helps meet the demands of power-hungry systems such as the start-stop motor/generator of a mild hybrid vehicle, as well as loads such as electric power steering, electric supercharging, and vacuum and water pumps.

Bodo’s Power Systems
December, 2021
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ePower Chipset Family for High Power Density Applications Chosen as Bodo’s Power System ‘Product of the Month’

ePower Chipset Family for High Power Density Applications Chosen as Bodo’s Power System ‘Product of the Month’

EPC has introduced a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23101 eGaN IC plus EPC2302 eGaN FET offers an ePower Chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

Bodo’s Power Systems
February, 2022
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EPC Releases Phase 14 Report on GaN Reliability and the use of Physics-Based Models to Project eGaN Device Lifetime

EPC Releases Phase 14 Report on GaN Reliability and the use of Physics-Based Models to Project eGaN Device Lifetime

Efficient Power Conversion (EPC) publishes Phase-14 Reliability Report, which adds to the extensive knowledge and demonstrates a robustness capability unmatched by silicon power devices.

EL SEGUNDO, Calif.— February 2022 — EPC announces its Phase-14 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. The rapid adoption of GaN devices in many diverse applications calls for the continued accumulation of reliability statistics and research into the fundamental physics of failure in GaN devices. The Phase-14 Reliability Report presents the strategy used to measure and predict lifetime based upon tests that force devices to fail under various conditions. This information can be used to create more robust and and higher performance products for applications such as lidar for autonomous cars, robotics, security, and drones, high power density computing, and satellites, to name just a few.

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2 kW, 48 V/14 V, Bidirectional Converter with Regulated Output Voltage Reference Design Board featuring ePower™ Chipset launched by EPC

2 kW, 48 V/14 V, Bidirectional Converter with Regulated Output Voltage Reference Design Board featuring ePower™ Chipset launched by EPC

The EPC9170 is a two-phase, regulated output voltage, 48 V – 14 V bidirectional converter that delivers 2 kW with 96.8% peak efficiency

EL SEGUNDO, Calif.— January 2022 — EPC announces the availability of the EPC9170, a 2 kW, two-phase 48 V – 14 V bidirectional converter that operates with 96.8% peak efficiency in a small footprint. The board features the ePower™ 100 V, 65 A integrated circuit chipset. The chipset includes the EPC23101 eGaN® IC plus EPC2302 eGaN® FET for a solution capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

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Easy-to-Use Design Tools Reduce Time to Market for High Performance Gallium Nitride (GaN) Based Power System Designs

Easy-to-Use Design Tools Reduce Time to Market for High Performance Gallium Nitride (GaN) Based Power System Designs

Efficient Power Conversion (EPC) provides engineers with a growing array of design tools, models, and performance simulations for high performance GaN-based designs.

EL SEGUNDO, Calif.—  January, 2022 — EPC announces the debut of the GaN Power Bench™, a suite of design tools to assist engineers in getting the optimal performance from their GaN-based designs. eGaN® FETs and ICs provide the fast switching, high efficiency and small size that can meet the stringent power density requirements of today’s leading-edge applications. The tools in the GaN Power Bench assist designers in the selection of the best GaN device for the application, simulate and optimize the thermal performance of the design, and provide application examples with all the supporting documentation needed to quickly and easily replicate the optimal design tips necessary for ideal performance.

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The Impact of GaN on Advanced Automotive Design

The Impact of GaN on Advanced Automotive Design

Wide-bandgap semiconductors like gallium nitride (GaN) and silicon carbide (SiC) are changing how people are thinking about power. In this video, Electronic Design talks to Alex Lidow, Founder and CEO of Efficient Powert Conversion (EPC), about the growing role of GaN in advanced embedded applications like automotive, among others such as space.

Electronic Design
January, 2022
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CES 2022: GaN Technology for the Next Future

CES 2022: GaN Technology for the Next Future

The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.

Power Electronics News
January, 2022
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EPC Introduces a 12 V – 48 V 500 W GaN Boost Converter Demonstration with Same BOM Size as Silicon, Offering Superior Efficiency and Power Density

EPC Introduces a 12 V – 48 V 500 W GaN Boost Converter Demonstration with Same BOM Size as Silicon, Offering Superior Efficiency and Power Density

The combination of the Renesas two-phase synchronous GaN boost controller with ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enables high power density and low-cost DC-DC conversion.

EL SEGUNDO, Calif.—  January, 2022 — EPC announces the availability of the EPC9166, a 500 W DC-DC demo board that converts a 12 V input to 48 V output. The EPC9166 demo board demonstrates the Renesas ISL81807 80 V two-phase synchronous boost controller with the latest generation EPC2218 eGaN FETs from EPC to achieve greater than 96.5% efficiency in a 12 V input to 48 V regulated output conversion with 500 kHz switching frequency.  The output voltage can be configured to 36 V, 48 V, and 60 V. The board can deliver 480 W power without a heatsink.

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GaN Application Base Widens, Adoption Grows

GaN Application Base Widens, Adoption Grows

Mature, low-cost manufacturing and proven reliability spur use in EVs, smartphones, and consumer electronics.

Efficient Power Conversion (EPC) has logged more than 100 emerging applications for its eGaN FETs and ICs. Alex Lidow, the company’s CEO, said the five fastest-growing applications are lidar systems for robotics, drones, consumer products, driver alertness systems, and autonomous vehicles; DC-DC converters for AI systems, servers, and telecom power systems; motor drives for e-mobility and robotics; satellite systems, including motor drives and DC-DC power supplies that require radiation hardness; and solar power point trackers.

Semiconductor Engineering
December, 2021
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Chipset handles 48-V DC-DC conversion in high-density computing, BLDC motor drives

Chipset handles 48-V DC-DC conversion in high-density computing, BLDC motor drives

EPC announces the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones.

The EPC23101 eGaN IC plus EPC2302 eGaN FET offers a new ePower Chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

EE World Online
December, 2021
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65 A ePower Chipset from Efficient Power Conversion (EPC) Redefines Power Conversion

65 A ePower Chipset from Efficient Power Conversion (EPC) Redefines Power Conversion

Efficient Power Conversion (EPC) introduces the ePower Chipset family that integrates 100 V GaN driver and FETs up to 65 A offering higher performance and smaller solution size for high power density applications including DC-DC conversion and motor drives.

EL SEGUNDO, Calif.— December 2021 — EPC announces the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones.

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EPC Introduces 100 V eGaN Power Transistor for High Power Density Power Conversion and Lidar Applications

EPC Introduces 100 V eGaN Power Transistor for High Power Density Power Conversion and Lidar Applications

The EPC2070 offers power systems designers a 100 V, 23 mΩ, power transistor capable of 34 A pulsed in an extremely small chip-scale package.  These new devices are ideal for applications such as 60 W, 48 V power converters, Lidar, and LED lighting.

EL SEGUNDO, Calif. — December 2021 — Efficient Power Conversion (EPC) announces the EPC2070, a 100 V GaN transistor with a maximum RDS(on) of 23 mΩ and a 34 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.

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GaN Devices for Smaller, Lighter, Smoother Motor Drives

GaN Devices for Smaller, Lighter, Smoother Motor Drives

Today, the permanent magnet motor, also known as DC brushless motor (BLDC), is widely used and offers higher torque capability per cubic inch and higher dynamics when compared to other motors. So far, silicon-based power devices have been dominant in the inverter electronics, but today their performance is nearing their theoretical limits. There is an increasing need for higher power density. Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy these needs.

Power Systems Design
November, 2021
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Low-Cost Motors Match Premium Motor Drive Performance with eGaN FETs for eBikes, eMotion, Drones, and Robots

Low-Cost Motors Match Premium Motor Drive Performance with eGaN FETs for eBikes, eMotion, Drones, and Robots

The EPC9145 GaN-based inverter enhances the performance of the motor for range, precision, torque, and, as a bonus, eliminates the electrolytic capacitors for lower overall system cost and higher reliability. The extremely small size allows integration into the motor housing for the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— November, 2021 — EPC announces the availability of the EPC9145, a 1 kW, 3-phase BLDC motor drive inverter using the EPC2206 eGaN® FET

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EPC21601 eToF Laser Driver IC Wins ASPENCORE’s World Electronics Achievement Award – Product of the Year 2021 Power Semiconductor / Driver IC

EPC21601 eToF Laser Driver IC  Wins ASPENCORE’s World Electronics Achievement Award –  Product of the Year 2021 Power Semiconductor / Driver IC

November 3, 2021 - Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, has won the Product of the Year 2021 – Power Semiconductor/Driver IC of the prestigious World Electronics Achievement Awards (WEAA) for EPC21601 eToF™ Laser Driver IC.

The WEAA scheme honors products that have made outstanding contributions to the innovation and development of the electronics industry worldwide. A committee comprising of ASPENCORE global senior industry analysts and online users worldwide select the winners. ASPENCORE is the largest electronics industry media and SaaS group in the world featuring media titles including EE Times and EDN.

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Motor Driver Applications in Space

Motor Driver Applications in Space

As the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability of manufacturing in space, motors – including their drivers – will take on even more functions. Of equal importance will be the motor drivers selected to drive those motors efficiently and reliably.

Components in Electronics
October, 2021
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EPC Launches 2 kW, 48 V/12 V DC-DC Demonstration Board for More Efficient, Smaller, Faster, Bidirectional Converters for Mild-Hybrid Cars

EPC Launches 2 kW, 48 V/12 V DC-DC Demonstration Board for More Efficient, Smaller, Faster, Bidirectional Converters for Mild-Hybrid Cars

The EPC9163 is a two-phase, 48 V – 12 V bidirectional converter that delivers 2 kW with 96.5% efficiency in small solution size for mild-hybrid cars and battery power backup units.

EL SEGUNDO, Calif.— November, 2021 — EPC announces the availability of the EPC9163, a 2 kW, two-phase 48 V – 12 V bidirectional converter that operates with 96.5 % efficiency in a very small footprint. The design of this demonstration board is scalable; that is, two converters can be paralleled to achieve 4 kW or three converters can be paralleled to achieve 6 kW. The board features eight EPC2218 100 V eGaN® FETs and is controlled by a module that includes the Microchip dsPIC33CK256MP503 16-bit digital controller.

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40 V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

40 V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2067 (1.3 mΩ typical, 40 V) eGaN FET. 

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