GaN (Gallium Nitride) FETs are revolutionizing power electronics with superior reliability compared to traditional silicon semiconductors. In this video from PCIM Europe 2025, EPC CEO Alex Lidow explains the fundamental advantages of GaN technology for power conversion applications. Learn why GaN devices can operate at 300°C while silicon fails, understand the absence of the Spirito effect in GaN FETs, and discover how these wide bandgap semiconductors achieve radiation immunity for space applications.

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