This article discusses the advantages of GaN-based power stages and introduces a sample device from EPC, implemented in a half-bridge topology. It explains how to use associated development kits to quickly get started on a project. In the process, designers will learn how to measure the parameters of a BLDC motor and operate it in sensorless field orientation control (FOC) with minimal programming effort using Microchip Technology’s motorBench Development Suite.

Digi-Key Electronics
April, 2023
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Richtek, the global leading analog IC design company has teamed up with EPC, the leading provider of gallium nitride (GaN)-based power management technology to launch a new reference design for fast charging applications, achieving high power density and up to 98% efficiency.

DigiTimes
January, 2023
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From Nov. 15 to 18, electronica 2022 will bring the international electronics industry together at the Munich exhibition grounds. Wide Bandgap Semiconductors, Renewable Energies, Smart Grid, and Energy Storage will be the major topics covered by the Power Electronics Forum at electronica 2022. In this podcast, onsemi president and CEO Hassane El-Khoury, Silanna Semiconductor North America CEO Mark Drucker, and of Efficient Power Conversion (EPC) CEO Alex Lidow will introduce the Power Electronics Forum. Interview with Alex Lidow starts at 31:55

EETimes
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Gallium nitride devices are leading the innovation in power conversion. The benefits of GaN-based inverters are becoming increasingly evident in motor drive applications.

Power Electronics News
October, 2022
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As the level of automation increases in machines, detailed awareness of the surroundings becomes necessary. Time-of-flight based 3D imaging systems have become the eyes of machines. eGaN^® technology has been the workhorse of laser drivers for these systems, enabling the resolution to make intelligent decisions.

Bodo’s Power Systems
October, 2022
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The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are revolutionizing motor drive applications such as industrial drones, e-bikes, scooters, power tools.

Bodo’s Power Systems
April, 2022
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In this article, the most common reasons for some customers to be slower in their embracing what is clearly a displacement technology for their older silicon-based power MOSFETs will be discussed. Without going into the detailed statistics, a list of reasons, in order of frequency is derived. This list is based upon the understanding that some applications will place higher emphasis than others on certain characteristics of GaN. Our discussion is limited to devices rated at less than 400 V, as that is the application focus for Efficient Power Conversion (EPC) FET and IC products.

Power Systems Design
March, 2022
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Discrete power transistors, whether silicon-based or GaN-on-silicon, are entering their final chapter. GaN-on-Si integrated circuits offer higher performance in a smaller footprint with significantly reduced cost and less engineering required. This article details how the ascent of GaN is redefining power conversion.

Bodo’s Power Systems
October, 2020
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Brushless DC (BLDC) motors are a popular choice and are finding increasing application in robotics, drones, electric bicycles, and electric scooters. All these applications are particularly sensitive to size, weight, cost, and efficiency. A monolithically integrated GaN power stage is demonstrated powering a 400 W capable BLDC motor with low switching losses and significant savings in size and weight.

Power Electronics Europe
May, 2020
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Beyond just performance and cost improvement, the most significant opportunity for GaN technology to impact the power conversion market comes from its intrinsic ability to integrate multiple devices on the same substrate. GaN technology, as opposed to standard silicon IC technology, allows designers to implement monolithic power systems on a single chip in a more straightforward and cost-effective way.

Bodo’s Power Systems
May, 2020
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Starting on page 13 of this story, EPC discusses with David Morrison the latest GaN developments meant for APEC. Alex Lidow, CEO and co-founder of EPC, discussed his company’s new power stage ICs, their development of GaN-based reference designs using a multi-level topology and various demos that were originally bound for APEC.

How2Power Today
April, 2020
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With silicon near its theoretical limits new designs heavily favor the continued adoption of GaN devices. GaN devices are early in their evolution, with advances in performance and integration and more products coming.

Electronics Weekly
December, 2019
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It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow. There are many reasons to use GaN-on-Si power transistors such as eGaN FETs, in telecoms, vehicles, healthcare and computing. Smaller, faster, lower cost, and more integrated, GaN-on-Si devices have spent a decade gaining the confidence and trust of designers across the spectrum of power conversion applications.

Electronic Specifier
November 20, 2019
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GaN is making possible what was once thought to be impossible in many industries. Alex Lidow, EPC, explains how GaN technology is contributing to significant improvements in medicine.

Electronic Specifier
August, 2019
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Efficient Power Conversion (EPC) has recently introduced two new, 100V, GaN devices that are able to handle 48V server and automotive needs. I will be examining the 48V server power solutions to the processor as well as in automotive and energy storage systems (See my article Bi-directional DC/DC power supplies: Which way do we go?) bi-directional supplies, in an EDN exclusive article coming up in the near future. GaN power transistors MUST be a part of these kinds of architectures; from my point-of-view there is no better alternative.

Planet Analog
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In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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With the power architecture transition from a 12 V to a 48 V bus power distribution in modern data centers, there is an increased demand to improve 48 V power conversion efficiency and power density. In this context, DC-DC converters designed using eGaN^® FETs and ICs provide a high efficiency and high power density solution. Additionally, with the advent of 48 V power systems in mild-hybrid, hybrid and plug-in hybrid electric vehicles, GaN transistors can provide a reduction in size, weight, and Bill of Materials (BOM) cost.

Power Systems Design
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In this video Alex Lidow, Founder and CEO of EPC, talks to Alix Paultre, Editor-in-Chief of Power Electronics News, about the various demonstrations of GaN-based solutions at the EPC booth at APEC 2018 in San Antonio, Texas. The high-frequency operation and other advanced performance advantages over Silicon enables GaN to empower applications from LIDAR to wireless power transmission. The booth exhibits include examples of these, from a real-time LIDAR demonstration to a running "wireless desk".

Power Electronics News
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